2023
DOI: 10.1039/d3na00465a
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First-principles investigations of metal–semiconductor MoSH@MoS2 van der Waals heterostructures

Son-Tung Nguyen,
Cuong Q. Nguyen,
Nguyen N. Hieu
et al.

Abstract: Two-dimensional (2D) metal-semiconductor heterostructures play a critical role in the development of modern electronics technology, offering a platform for tailored electronic behavior and enhanced device performance. Herein, we construct a...

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Cited by 7 publications
(4 citation statements)
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“…This finding indicates that among the five stacking patterns SP-II is the most energetically favorable. Additionally, the values of the E b have the same magnitude with those in other vdW heterostructures, 23,33,36,50,51 indicating that the NbS 2 and BP layers are bonded together via the weak vdW interactions. It should be noted that the weak vdW interactions between the NbS 2 and the BP layers preserve their intrinsic properties and enable the experimental synthesis of the heterostructure.…”
Section: Resultsmentioning
confidence: 62%
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“…This finding indicates that among the five stacking patterns SP-II is the most energetically favorable. Additionally, the values of the E b have the same magnitude with those in other vdW heterostructures, 23,33,36,50,51 indicating that the NbS 2 and BP layers are bonded together via the weak vdW interactions. It should be noted that the weak vdW interactions between the NbS 2 and the BP layers preserve their intrinsic properties and enable the experimental synthesis of the heterostructure.…”
Section: Resultsmentioning
confidence: 62%
“…Recently, a plethora of 2D M-S heterostructures formed by stacking 2D metals on top of 2D semiconductors have been designed and discovered, such as graphene-based M-S heterostructures [22][23][24][25][26][27][28][29][30][31][32] and Janus MoSH-based M-S heterostructures. [33][34][35][36] Recently, 2D NbS 2 , a member of the TMDs family, has emerged as an effective 2D electrical contact material with other 2D semiconductors to create a 2D M-S contact with lower contact barrier and contact resistance. [37][38][39][40] Experimentally, the NbS 2 -based M-S can be synthesized by different strategies, including one-step chemical vapor deposition (CVD) 38 and epitaxial growth.…”
Section: Introductionmentioning
confidence: 99%
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“…The ability to tune the surface characteristics of these microparticles is of particular significance, as it allows researchers and engineers to precisely control their performance in various settings [8,9]. By manipulating the interaction between the surface transition metal ions and the semiconductor lattice, specific functionalities can be engineered, making these microparticles versatile building blocks for advanced technologies [10][11][12][13]. Moreover, the exploration of their unique features will unveil opportunities for transformative advances in diverse fields, ranging from electronics and energy to catalysis and biomedicine [14].…”
Section: Introductionmentioning
confidence: 99%