First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Jech, Markus; Tyaginov, Stanislav; Kaczer, B.; Franco, J.; Jabs, Dominic; Jungemann, C.; Waltl, Michael

doi:10.1109/iedm19573.2019.8993630

Cited by 13 publications

(17 citation statements)

References 22 publications

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“…4(a), the electron injection at minimum bond length will enhance the repulsive force between the Si and H atom, and thus the Si-H bond vibration becomes larger in amplitude, which is consistent with the energy accumulation picture of the MVE mechanism. Moreover, it can be seen that the enhanced Si-H vibration can last throughout the simulation, which supports the claim that the Si-H phonon lifetime is long (1-1.5 ns) due to the discrepancy between Si-H stretching frequency and highest bulk Si phonon frequency [31,46]. The temporary decay of vibration shown in Fig.…”

Section: B Mutation Of Si-h States and Bond Dynamics In A Si/sio 2 Interfacesupporting

confidence: 82%

“…4(b). All this makes the breaking of Si-H bonds extremely challenging, even under the MVE process, which requires an accumulation of many electron injections with the right phase factor (the energy enhanced phase), within the phonon lifetime of 1-1.5 ns [31].…”

Section: B Mutation Of Si-h States and Bond Dynamics In A Si/sio 2 Interfacementioning

confidence: 99%

“…The MVE mechanism was proposed during investigations on hydrogen desorption from the Si surface, but was also recognized as the mechanism for Si-H bond breaking in MOSFETs following some experimental observations, e.g., the dependence of interface trap generation on current (electron) density and the significant hydrogen/deuterium isotope effect [26,27]. Nevertheless, these Si-H bond breaking mechanisms are still rough ideas that were very recently deemed to be "speculative" [31], and "more work is needed to understand it" [32]. Investigation and explanation of them at the atomic level are essential so that correct analytical frameworks for defect creation can be developed, and possible solutions could be proposed accordingly.…”

Section: Introductionmentioning

confidence: 99%

“…Investigation and explanation of them at the atomic level are essential so that correct analytical frameworks for defect creation can be developed, and possible solutions could be proposed accordingly. On top of this, it has been tacitly accepted that the Si-H bond breaking is the whole picture of carrier induced interface defect creation [30][31][32], but whether Si-O bonds can also be broken by low-energy carriers has not been revealed. In short, the physical origin of defect creation at the semiconductoroxide interface is far from understood.…”

Section: Introductionmentioning

confidence: 99%

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Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

et al. 2021

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Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a "Si-H•••H-O" complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H•••H-O complex will be the center for defect creation and device degradation. We also explain why such a center might be relatively easy to form during the hydrogen annealing process.

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Section: B Mutation Of Si-h States and Bond Dynamics In A Si/sio 2 Interfacesupporting

confidence: 82%

Section: B Mutation Of Si-h States and Bond Dynamics In A Si/sio 2 Interfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

et al. 2021

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“…On the other hand, describing HCD and the creation of interface defects due to the interaction of energetic carriers with interfacial Si-H bonds is based on our newly developed physical framework [24]. This model assumes a resonance state accessible, as was already proposed by the group of Hess [25], [26], for electrons (and holes) which upon electronic relaxation excites phonon modes of the silicon-hydrogen complex and eventually triggers bond dissociation.…”

Section: Model Calibrationmentioning

confidence: 99%

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V _G, V _D} Bias Space: Implications and Peculiarities

Jech

Rott

Reisinger

et al. 2020

IEEE Trans. Electron Devices

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Characterizing mixed hot-carrier/bias temperature instability (BTI) degradation in full {V G , V D } bias space is a challenging task. Therefore, studies usually focus on individual degradation mechanisms, such as BTI and hot-carrier degradation (HCD). However, a simple superposition of these mechanisms at an arbitrary {V G , V D } combination often fails to predict the cumulative damage. We experimentally acquired a large data set covering the full bias space of a pMOSFET which allows us to obtain detailed degradation and recovery maps. Our models for describing oxide and interface defects provide physical insights into the underlying mechanisms and a possible interplay between the degradation modes. Additionally, we perform a dedicated experiment to reveal the implications of different stress regimes onto the various types of defects by switching BTI and HCD stress conditions. The results clearly reveal the conceptual limits of the assumption of independent degradation regimes. Index Terms-Bias temperature instability (BTI), defect modeling, full bias map, hot-carrier degradation (HCD), mixed-mode stress, reliability. I. INTRODUCTION A SSESSING the reliability of a technology typically focuses on idealized device degradation modes, such as bias temperature instability (BTI) and hot-carrier degradation (HCD). Each of these degradation modes is usually assessed in

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First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

Hong¹,

Yao²,

Liu³

et al. 2022

Chinese Phys. B

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The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects. The depassivation of these defects suggests that the deep levels associated with the defects are reactivated, affecting the performance of devices. This work simulates the depassivation reactions between holes and passivated amorphous-SiO2/Si interface defects (HPb + h → Pb + H+). The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers. In addition, the atomic charges of the initial and final structures are analyzed by the Bader charge method. It is shown that more than one hole is trapped by the defects, which is implied by the reduction in the total number of valence electrons on the active atoms. The results indicate that the depassivation of the defects by the holes actually occurs in three steps. In the first step, a hole is captured by the passivated defect, resulting in the stretching of the Si–H bond. In the second step, the defect captures one more hole, which may contribute to the breaking of the Si–H bond. The H atom is released as a proton and the Si atom is three-coordinated and positively charged. In the third step, an electron is captured by the Si atom, and the Si atom becomes neutral. In this step, a Pb-type defect is reactivated.

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First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Cited by 13 publications

References 22 publications

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V _G, V _D} Bias Space: Implications and Peculiarities

First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

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First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Cited by 13 publications

References 22 publications

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities

First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects

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Product

Resources

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Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V _G, V _D} Bias Space: Implications and Peculiarities

First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects