non-vdW crystals (such as Mn 3 Si 2 Te 6, [12,13] ) has led to an interesting arena for studying fundamental 2D magnetism and provided numerous opportunities for 2D magnetic, magnetoelectric, and magnetooptic applications. [14,15] Electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors is an important step in creating novel spintronic devices. As a single integrated platform, the spintronic devices based on these materials are expected to complement or outperform (in some cases) the conventional semiconductor-based devices. [16] However, compared to binary 2D metal chalcogenides, synthesis of ternary 2D metal chalcogenides is far more challenging, so the proof-of-concept studies on the magnetoelectric phenomena of the ferromagnetic ternary 2D metal chalcogenides have been performed on thin flakes mechanically exfoliated from bulk crystals. [9,17] There have been limited reports on the synthesis of ferromagnetic 2D ternary metal chalcogenide thin films. [18,19] The synthesis from pure elemental mixtures in an evacuated quartz ampule at 900-1100 °C through the self-flux of elements took 5-20 days. [7,13,17,20] Only two types of thin films have been synthesized via molecular beam epitaxy (MBE) in an ultra-high vacuum condition. [21][22][23] Very recently, a few CVD-based synthesis have been reported for binary 2D metal chalcogenide magnetic crystals such as CrSe and FeTe. [24,25] However, to the best of our knowledge, the conventional CVD-based and Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr 2 Ge 2 Te 6 , Cr 2 Si 2 Te 6 , Mn 3 Si 2 Te 6 ) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr 2 Ge 2 Te 6 and Cr 2 Si 2 Te 6 , and in-plane direction for Mn 3 Si 2 Te 6 . In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors.