First principles study of electronic and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="italic">Ag</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="italic">CdSnS</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>chalcogenides for photovoltaic applications

Saidi, S.; Zriouel, S.; Drissi, L.B.; Maâroufi, Mohamed

doi:10.1016/j.commatsci.2018.06.004

Cited by 15 publications

(4 citation statements)

References 36 publications

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“…Studying the electronic and optical characteristics of Ag 2 CdSnS 4 , by Saidi et al [35] also discovered a high absorption coefficient value. According to Bishop et al [36], contrary to the deduced results by Chagarov et al [37], chalcogenides characteristics can be markedly enhanced by raising Ag concentration.…”

Section: Introductionmentioning

confidence: 98%

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Salman Khan,

Gul,

Benabdellah

et al. 2024

Phys. Scr.

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Ternary chalcogenides are often studied for their remarkable heat resistance and flexible optical properties. We used the well-known density functional theory and examine the complicated connections between the various physical features of the exclusive GePtCh (Ch = S, Se, and Te) ternary chalcogenides. The valence band is formed by the hybridization of the Ge-s/p/d, Pt-s/p/d, and s-p, se-p, and Te-p orbitals in the energy range of -6.0 eV to 0 eV. The materials under consideration are confirmed as indirect bandgap materials with estimated energy gaps of 1.3 eV, 0.8 eV, and 0.2 eV, respectively. By substituting Se and Te for S reduced the bandgap in these materials. The complex dielectric function's components, absorption coefficients, real optical conductivity, energy loss functions, refractive index, reflectivity, and extinction coefficient, are studied and examined to identify their potential use in optoelectronic applications. The thermodynamic parameters of these ternary systems are calculated by employing the quasi-harmonic Debye model. The materials are suitable for thermoelectric applications, as evidenced by their considerable and outstanding thermoelectric properties. Among the materials, GePtTe possessed the highest absorption, indicating that it is a suitable material for the use in optoelectronic applications.

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Section: Introductionmentioning

confidence: 98%

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Salman Khan,

Gul,

Benabdellah

et al. 2024

Phys. Scr.

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“…9,21 Additionally, the absorption coefficient of Ag 2 CdSnS 4 has been calculated to be suitable for a solar cell. 22 The larger Ag + ionic radii (1.00 Å) compared to Cu + (0.60 Å) suggest that substituting Cu to Ag could further reduce 2Cu Cd + Sn Cd defects. Other theoretical works highlighted that as the difference in ionic radii size of Ag–Cd is not as high as Ag–Zn (Ag + to Cd 2+ is 28% larger, while Ag + to Zn 2+ is 66% larger), Ag 2 CdSnS 4 might not be as disorder-resistant as compared to Ag 2 ZnSnS 4 .…”

Section: Introductionmentioning

confidence: 99%

Efficiency enhancement and doping type inversion in Cu₂CdSnS₄ solar cells by Ag substitution

Ibrahim,

Lie,

Tan

et al. 2024

J. Mater. Chem. A

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“…[19] Berri et al and Saidi et al have calculated the structural, electronic, and optical properties of KAg 2 SbS 4 and Ag 2 CdSnS 4 materials, respectively, and found these materials exhibit excellent absorption coefficients (>10 5 cm −1 ) and proper optical bandgap to act as an absorber layer. [20,21] Further, our group has studied structural and optoelectronic properties of Ag 2 MgSn(S/Se) 4 chalcogenide using first principles. [22] Recently, these alternative absorber layer materials were employed to fabricate solar cell devices.…”

Section: Introductionmentioning

confidence: 99%

Device Simulation of Ag₂SrSnS₄ and Ag₂SrSnSe₄ Based Thin‐Film Solar Cells from Scratch

Srivastava

Tripathy

Lenka

et al. 2021

Advcd Theory and Sims

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The structural, optoelectronic and elastic properties of quaternary chalcogenide materials Ag 2 SrSn(S/Se) 4 in kesterite (Kes) and stannite (Sta) phases are studied using the HSE hybrid functional within the density functional theory. Ag 2 SrSnSe 4 in kesterite and stannite phases is found to have direct bandgap of 1.13 and 1.38 eV, respectively, along the high symmetry 𝚪 points. To analyze the electronic properties, PDOS for Ag 2 SrSn(S/Se) 4 in kesterite and stannite phases are studied and explained. To get more insights into the optical behavior of the materials the authors also investigate the dielectric function, refractive function, absorption spectrum, extinction coefficient, reflectivity, and optical conductivity. They also calculate the single-layer absorber efficiency of Ag 2 SrSn(S/Se) 4 in kesterite and stannite phases using the spectroscopic limited maximum efficiency (SLME) approach to predict their potential as an efficient absorber layer material in thin-film solar cells (TFSC). The SLME for Ag 2 SrSnSe 4 in kesterite and stannite phases is found to be 31.4% and 32.4%, respectively. Further, a complete solar cell device analysis with these materials as an absorber layer is carried out using the SCAPS-1D software. They found that devices with the kesterite and stannite structure of Ag 2 SrSnSe 4 have a predicted efficiency of 20.04% and 18.59%, respectively.

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First principles study of electronic and optical properties ofAg2CdSnS4chalcogenides for photovoltaic applications

Cited by 15 publications

References 36 publications

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Efficiency enhancement and doping type inversion in Cu₂CdSnS₄ solar cells by Ag substitution

Device Simulation of Ag₂SrSnS₄ and Ag₂SrSnSe₄ Based Thin‐Film Solar Cells from Scratch

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First principles study of electronic and optical properties ofAg2CdSnS4chalcogenides for photovoltaic applications

Cited by 15 publications

References 36 publications

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Insights into optoelectronic, thermodynamic, and thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: first-principles perspective

Efficiency enhancement and doping type inversion in Cu2CdSnS4 solar cells by Ag substitution

Device Simulation of Ag2SrSnS4 and Ag2SrSnSe4 Based Thin‐Film Solar Cells from Scratch

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Product

Resources

About

Efficiency enhancement and doping type inversion in Cu₂CdSnS₄ solar cells by Ag substitution

Device Simulation of Ag₂SrSnS₄ and Ag₂SrSnSe₄ Based Thin‐Film Solar Cells from Scratch