First principles study of the electric field effect on magnetization and magnetic anisotropy of FeCo/MgO(001) thin film

Abstract

The magnetization and magnetic anisotropy of FeCo/MgO(001) thin film under electric field were investigated by the first-principles calculations. Three different interface configurations were considered: Co/Fe/MgO, Fe/Co/MgO, and FeCo/FeCo/MgO. It was found that the perpendicular anisotropy was preferred for all the configurations and enhanced with increasing electric field, which was consistent with experimental results. Furthermore, our calculations indicated that the FeCo/FeCo/MgO was the most stable configuration and had the largest perpendicular magnetic anisotropy energy. The results also showed that the FeCo/FeCo/MgO and Fe/Co/MgO configurations had larger magnetoelectric coefficients than those of the Co/Fe/MgO configuration and previous report about the Fe/MgO interface.

Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

“…Much research has been carried out to understand and improve the properties of this voltage effect [3][4][5][6][7][8][9][10]. The mechanism can be understood as a charge accumulation/subtraction or shift of band filling at the metal/dielectric interface as a result of the application of voltage [11][12][13][14][15].…”

Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

“…(4), the PMA of the FL also depends on the EF dependent DM s However, He et al 26 has reported that the change in Ms under EF, i.e., DMs is less than 3% at E ¼ 1 V/nm in a CoFe-MgO system. Thus, the value of DMs can be neglected, and Eq.…”

Ferroelectric control of magnetism and transport in oxide heterostructures

“…Since the magnetocrystalline anisotropy determines the preferential orientation of magnetization, it may yield entirely new devices for magnetic data storage if the magnetocrystalline anisotropy can be tuned by electric fields. Recently, manipulation of magnetocrystalline anisotropy by applying an electric field has been studied and achieved in many systems with ferromagnetic metallic interfaces (surfaces) 18,[30][31][32][33][34][35][36] as well as at the interfaces (surfaces) of dilute magnetic semiconductors. 37,38 In particular, Maruyama et al 35 obtained a significant change in perpendicular magnetocrystalline anisotropy at the Fe/MgO (001) interface by an electrical voltage, which reached up to 40% in energy difference for a relatively small applied fields in the order of 100 mV/nm, as shown in Fig.…”