The hydrostatic-pressure-induced transition phase of BaS from the NaCl-type structure (B1) to the CsCl-type structure (B2) is investigated by ab initio plane-wave pseudopotential density functional theory method. It is found that the transition pressure from B1 to B2 phases is 8.2 GPa according to the usual condition of equal enthalpy. Through the quasi-harmonic Debye model, the dependences of the relative volume V/V 0 on the pressure P, the thermal expansion parameter ratio 0 0 ( )/ γ γ γ − on pressure P, and the Debye temperature Θ and heat capacity C V on pressure P and temperature T are estimated.The high-pressure properties of II-VΙ compounds have attracted the interest of researchers for over 30 years because of their wide band gap character and the potential applications for optoelectronic devices [1,2] . However, only recently, the feasibility of green-blue opto-electronic devices based on these materials has been demonstrated [3] .BaS belongs to the family of alkaline-earth chalcogenides (XY: X= Be, Mg, Ca, Sr, Ba; Y=O, S, Se, Te), which can form a very important closed-shell ionic system crystallized in the six-fold coordinated NaCl-type (B1) structure or crystallize in eight-fold coordinated CsCl-type structure (B2) at room temperature [4] . The band gap ranges from about 2.5 to 6 eV. A noticeable feature in the electronic band structure of the XY compounds is that there is no d electron in the valance band. Previous experimental studies show that, prior to metallization, the barium chalcogenides BaY (Y=S, Se, Te) undergo phase transition from B1 to B2 structure at about 6.5, 6.0, and 4.8 GPa, respectively [4][5][6] .The structural and electronic properties of BaY (Y=O, S, Se, Te) compounds have been investigated, both experimentally [7] and theoretically during the past. In Ref.[8], local-density-functional total-energy calculations are reported for both the structural and metallization transitions of BaSe and BaTe. A metallization pressure of about 40 GPa is predicted for BaSe. These calculations represent the first convincing demonstration of the ability of the local-density-functional approximation to predict band-overlap metallization accurately [8] . The insulator-metal transition volumes for BaS, BaSe, and BaTe are calculated using the self-consistent augmented-