2010
DOI: 10.1063/1.3437252
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First-principles study of type-I and type-VIII Ba8Ga16Sn30 clathrates

Abstract: We calculated the electronic structures and the thermoelectric properties for type-I and type-VIII Ba 8 Ga 16 Sn 30 ͑BGS͒ clathrates. The band structures show that type-I and type-VIII BGS are indirect semiconductors with band gaps of 0.51 eV and 0.32 eV, respectively. The calculated Seebeck coefficient of n-type type-I BGS is higher than that of n-type type-VIII BGS because of the larger density of states in type-I at the bottom of the conduction band. This is in good agreement with the experimental results. … Show more

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Cited by 45 publications
(43 citation statements)
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“…The relaxation time of BGS-VIII obtained in the present study is three times longer than the previously calculated value (¸= 5.40 © 10 ¹17 s). 23) We believe that this difference is due to some difference in the crystallization process of the samples. Figure 8 shows the calculated thermal conductivity ¬ = ¬ e + ¬ l (¬ e : electronic thermal conductivity, ¬ l : lattice thermal conductivity) of p-type BGSS-VIII with a carrier concentration of n = 5.6 © 10 25 m…”
Section: Thermoelectric Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…The relaxation time of BGS-VIII obtained in the present study is three times longer than the previously calculated value (¸= 5.40 © 10 ¹17 s). 23) We believe that this difference is due to some difference in the crystallization process of the samples. Figure 8 shows the calculated thermal conductivity ¬ = ¬ e + ¬ l (¬ e : electronic thermal conductivity, ¬ l : lattice thermal conductivity) of p-type BGSS-VIII with a carrier concentration of n = 5.6 © 10 25 m…”
Section: Thermoelectric Propertiesmentioning
confidence: 99%
“…In this study, we calculated the BS and the DOS of BGSS-VIII assuming that the 8c sites are partly occupied by Sb and compared them with those of BGS-VIII. 23) The BS and DOS calculations were performed using the full potential linearized augmented plane wave (FLAPW) method based on the density-functional theory.…”
Section: Band Structure and Density Of States Calculationmentioning
confidence: 99%
“…To obtain a large S 1113) These compounds form a narrow bandgap of a few hundred meV near E F , comparable to clathrates 14) and skutterudites. 15) The maximum ZT found among these intermetallic compounds is 0.50 at 773 K for RuGa 2 compound. 7) Although the effects of hole 8) and electron doping 10) on the thermoelectric properties above room temperature have been investigated for RuGa 2 , we have investigated various kinds of electron dopants effects on the electrical conductivity and Seebeck coefficient for RuGa 2 compound: we selected single electron doping elements (Co and Rh) and double electron doping elements (Ni and Pd).…”
Section: Introductionmentioning
confidence: 99%
“…Thus, carrier dependence in the peak frequencies may also be caused by the electronic structure where the Ba atomic orbitals hybridize with those of Ga and Sn in the conduction band. 27 Electrons on Ba 2+ ions can vary the effective charge of Ba 2+ and hence modify the potential in the atomic cage. The frequency and/or anharmonic potential may be renormalized by such an interaction with n-type carriers, resulting in the carrier dependence ofb and ω 0 .…”
Section: Peak Frequencymentioning
confidence: 99%