First principles valence band offset for Ga-interface in GaInP/GaAs superlattice

Agrawal, Bal K.; Agrawal, S.; Srivastava, Rekha

doi:10.1016/j.physe.2005.09.012

Cited by 2 publications

(1 citation statement)

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“…The electronic structure calculations of ordered GaInP/GaAs superlattices using the linear-muffin tin orbital Agarwal et al approximation [21]. Further, the second harmonic generation (SHG) properties have been calculated and measured in the [001] direction [22].…”

Section: Introductionmentioning

confidence: 99%

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

AlObaid

2022

Phys. Scr.

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Group III-V semiconductors are extensively studied for various technological applications. Different properties of Ga1-xInxP such as electronic, optical, elastic, thermal and mechanical, etc. were studied under different concentrations. However, there is no evident for thermoelectric performance of Ga1-xInxP (x = 0.0, 0.25, 0.50, 0.75 and 1.0). In the present study, we have calculated the structural, electronic and thermoelectric behavior of Ga1-xInxP by utilizing the WIEN2K package. The InP show indirect semiconductor nature of band gap of 2.1 eV. By adding the concentration of In, the band gap nature shifts from indirect to direct with a decrease in the band gap. For thermoelectric properties, Seebeck, thermal and electrical conductivity, power factor and figure of merit ZT are investigated through the BoltzTraP code. Our study reveals that Ga1-xInxP has a maximum value of ZT=0.79 at x=1, provide an opportunity for developing good thermoelectric devices.

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Section: Introductionmentioning

confidence: 99%

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

AlObaid

2022

Phys. Scr.

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Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors

Chagarov

Kummel²

2010

Fundamentals of III-V Semiconductor MOSFETs

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First principles valence band offset for Ga-interface in GaInP/GaAs superlattice

Cited by 2 publications

References 21 publications

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors

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First principles valence band offset for Ga-interface in GaInP/GaAs superlattice

Cited by 2 publications

References 21 publications

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga1-x In x P (x = 0.0 to 1.0) alloys

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga1-x In x P (x = 0.0 to 1.0) alloys

Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors

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Product

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First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys