First results from the Stockholm Electron Beam Ion Trap

Böhm, S J; Enulescu, A.; Fritio, T; Orbán, Istvan; Tashenov, S.; Schuch, R.

doi:10.1088/1742-6596/58/1/067

Cited by 29 publications

(18 citation statements)

References 7 publications

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“…It was possible to determine electron-ion cross sections or rate coefficients in these measurements [14][15][16]. We present an alternative approach which, through detecting the population of all charges accumulated in an EBIT and separating the extracted charges by time-of-flight (TOF) [17] together with their associated photons. The measurements give electron-ion collision rate coefficients, namely, those for DR of charge-state separated ions, and from the photons, we get also the EIE rate coefficients for a mixture of ion charge states.…”

Section: Introductionmentioning

confidence: 99%

Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions

et al. 2020

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Charge-state selective recombination rate coefficients were measured by time of flight (TOF) analyzed highly charged Si ions extracted from an electron-beam ion trap. Additionally, the combination of simultaneous TOF and x-ray measurements and a separation of the dielectronic recombination contribution in the x-ray spectra is used for extracting electron-impact excitation rate coefficients for several overlaying charge states. Experimentally derived dielectronic recombination spectra for XIII and XIV Si are compared and found in excellent agreement with the results of relativistic many-body perturbation theory calculations.

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Section: Introductionmentioning

confidence: 99%

Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions

et al. 2020

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“…The measurement for the ions discussed in this paper was performed using Stockholm Refrigrated electron beam ion trap (R-EBIT) [12,13]. For the measurements, the gas atoms are injected into the EBIT through one of the ports.…”

Section: Methodsmentioning

confidence: 99%

KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions

Ali

2014

Journal of Atomic and Molecular Physics

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Dielectronic recombination measurements for highly charged ions were performed at the Stockholm refrigerated electron beam ion trap. We have obtained KLL DR resonance strengths for highly charged H-and He-like sulfur and silicon ions. The experimental results are compared with the theoretical data obtained from GRASP II code. Both the experimental and calculated results agree well within the experimental error bars. Moreover, the dielectronic recombination resonance strengths are used to obtain the new scaling parameters by incorporating our results with the previous measurements and to check the behaviour of scaling formula for H-and He-like isoelectronic sequences.

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“…2. The heart of the facility is the electron beam ion trap S-EBIT [19] for which the typical parameters are given in the inset of Fig. 2.…”

Section: S-ebit Laboratorymentioning

confidence: 99%

Smiletrap ii

et al. 2011

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The new Penning trap mass spectrometer SMILETRAP II has been set up at the AlbaNova Research Center, Stockholm. Based on the former spectrometer SMILETRAP I, it uses the merits of highly-charged ions to achieve high precision in the mass measurements. Various improvements over the SMILETRAP I setup will allow to routinely perform mass measurements with relative uncertainties of 10 −10 and below. In this paper we will discuss the limitations of SMILETRAP I and present the corresponding improvements of SMILETRAP II. An overview on the SMILETRAP II setup is given.

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First results from the Stockholm Electron Beam Ion Trap

Cited by 29 publications

References 7 publications

Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions

Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions

KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions

Smiletrap ii

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