First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001)

Liang, Yong; Gan, Shupan; Engelhard, Mark H.

doi:10.1063/1.1415372

Cited by 62 publications

(49 citation statements)

References 15 publications

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“…[1][2][3][4][5][6][7] Technologically, the high dielectric constants of alkaline-earth perovskite titanates such as SrTiO 3 and BaTiO 3 have made them…”

Section: Introductionmentioning

confidence: 99%

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

et al. 2011

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The first step required for oxide heteroepitaxy with atomically abrupt interfaces on Si and Ge(100) is the formation of an alkaline earth template layer. The atomic structure of this template layer on Ge(100) was characterized using scanning tunneling microscopy (STM) and electron diffraction. At elevated temperatures, Sr immediately roughens the surface; a transition that can be associated with Sr displacing Ge from the surface. With increasing Sr coverage a series of ordered (3×4), (3×2), (9×1) and (6×1) phases were observed. Transitions between these phases were accompanied by morphological changes: formation of the (3×4) phase smoothed surface; transition to a local (3×2) ordering was accompanied by trench formation; ordering of the trenches led to the (9×1) structure; and finally the (6×1) structure was characterized by atomic rows.For both Sr and Ba, highly ordered arrays of one-dimensional islands could be produced with double height steps preventing orthogonal domain formation. We associate the morphological transitions with strain relief of the surface phases and interactions of step ledges.

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“…[1][2][3][4][5][6][7] Technologically, the high dielectric constants of alkaline-earth perovskite titanates such as SrTiO 3 and BaTiO 3 have made them…”

Section: Introductionmentioning

confidence: 99%

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

et al. 2011

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“…Upon the clean ͑001͒ Si surface at a substrate temperature of 700°C ͑measured by an optical pyrometer͒, a strontium dose of 3.4ϫ 10 14 at./ cm 2 ͓one-half a monolayer 36 ͑ML͒ of strontium͔ was deposited from a strontium MBE source at a flux of ͑3-4͒ ϫ 10 13 at./ cm 2 / s. This formed an interfacial strontium silicide layer 2,5,6 that functions to protect the underlying silicon from oxidation and thus preserve an epitaxial template for epitaxial-oxide overgrowth. 24 The wafer was then cooled to near room temperature ͑under 200°C͒, where in UHV an additional 1 2 ML ͑3.4ϫ 10 14 at./ cm 2 ͒ of strontium was deposited. Unlike the strontium deposited at high temperature, which forms strontium silicide, 2,5,6 this room-temperature-deposited strontium layer remains metallic and enables moving a little farther away from the interface before exposing the wafer to oxygen.…”

Section: Methodsmentioning

confidence: 99%

“…Initially, SrTiO 3 thin films were grown on ͑001͒ Si using a thick SrO buffer layer typically 10 nm in thickness. [20][21][22][23] In the work of McKee and co-workers, 2,5-7 direct deposition of oxide films was achieved by incorporating an interfacial strontium silicide layer, which prevents oxidation of the interface 24 and hence, promotes epitaxy. Since then, many groups have achieved epitaxial growth of SrTiO 3 on silicon using very different growth strategies.…”

Section: Introductionmentioning

confidence: 99%

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

He¹,

Jia

Vaithyanathan

et al. 2005

Journal of Applied Physics

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The SrTiO 3 / Si interface was investigated by transmission electron microscopy for SrTiO 3 films grown on ͑001͒ Si by molecular-beam epitaxy with different native oxide ͑SiO 2 ͒ removal treatments, and Sr/ Ti flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the Sr/ Ti flux ratio. A low Sr/ Ti flux ratio ͑ϳ0.8͒ resulted not only in a layer of amorphous material at the film/substrate interface but also in the formation of crystalline C49 TiSi 2 precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between TiO 2 and the underlying silicon.

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“…As a result, this structure has no surface states in the band gap of the host [46], which is rather important for applications. The presence of a band gap adds to the resistance of the surface to oxidation [47] although one should note that both theory [48] and experiments [49] predict the silicide to become partly oxidized with formation of M-O-Si bonds. This (21) reconstruction is routinely used for the growth of AO and ABO 3 compounds on Si, including EuO [18,30,42].…”

mentioning

confidence: 99%

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

Averyanov

Sadofyev

Tokmachev

et al. 2015

ACS Appl. Mater. Interfaces

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Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g. spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers from a ferromagnetic semiconductor into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si -a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration of magnetic semiconductor with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level which may have general implications for the growth of functional oxides on Si. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.Modern information technology is based on the fundamental dichotomy: it utilizes charge of electrons to process information in semiconductors and their spin to store information in magnetic materials. Strong correlation of spin and charge degrees of freedom in the same material makes it possible to manipulate magnetically stored information with electric fields and/or modify fast logic gates by changing the magnetisation of their components. In metal multilayers, such effects are manifest in giant magnetoresistance, where the orientations of the macroscopic magnetisation in adjacent layers determine the electrical resistance of the structure [1,2]. Metallic spintronic devices, such as hard disk read heads and magnetic random access memory are among the most successful technologies of the past decades. However, metals cannot enhance signals -the prerequisite for transistor technology readily offered by semiconductors.The development of semiconductor spintronics requires the ability to inject, modulate and detect spin-polarized carriers in a single device, preferably made of technologically important materials currently used in integrated circuits such as Si or GaAs [3,4]. Thus far, the spin of the carriers has played a minor role in semiconductor devices mainly because Si and GaAs are nonmagnetic. On the other hand, the enhanced spin-related phenomena realized in diluted magnetic semiconductors (DMS) (especially 2 GaMnAs films [5]) open the way for applications in spintronics [6]. The interplay between electrical and magneti...

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First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001)

Abstract: Effect of surface treatment on the γ-WO 3 (001) surface: A comprehensive study of oxidation and reduction by scanning tunneling microscopy and low-energy electron diffraction

Cited by 62 publications

References 15 publications

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

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