In this study, pulsed laser deposition has been utilized
for the
controllable synthesis of WS2 thin films with growth orientation
ranging from vertically to horizontally aligned layers, and the effect
of growth parameters has been investigated. The growth of thin films
on SiO2 substrates at three different pressures (30, 50,
and 70 mTorr) and three different temperatures (400, 500, and 600
°C) has been studied. Detailed characterizations carried out
on the as-grown layers clearly show the formation of the 2H-WS2 phase and its morphological evolution with deposition conditions.
Atomic force microscopy and cross-sectional transmission electron
microscopy have been used to deduce the growth mechanism of the vertical
and planar films with different deposition parameters. The samples
grown with a combination of lower temperatures and higher pressures
exhibit a vertical flake-like growth with a flake thickness of ∼2–5
nm. However, at higher temperatures and lower pressures, the film
growth is observed to be rather planar. The gas sensing parameters
and the underlying mechanism have been observed to be quite different
for vertically and horizontally grown layers. The vertical layers
showed a selective response toward NO2 gas at room temperature
(RT) with a limit of detection less than 50 ppb. In comparison, a
very subdued and poor gas sensing response was recorded for the planar
film at RT. A large specific area and abundance of active edge sites
along with the flat basal plane present in the vertically grown layers
seem to be responsible for efficient gas sensing toward NO2.