Synthetic crystalline materials of the garnet group are used as scintillators in scanning electron microscopy. If a thick conductive layer is applied on the garnet surface, slower electrons don't have enough energy to pass through this relatively thick conductive layer on the scintillator surface. Therefore, either thinner conductive layer or appropriate patterning of the thicker layer has to be used. Within this contribution we study the patterning process of such conductive nano-layer. Resolution of the patterning process is of high interest. Two approaches are compared: direct writing electron beam lithography and mask projection UV lithography.