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Oriented vanadosilicate AM-6 thin films with an average thickness of 1-2 lm were prepared on the ITO coated glass substrates using secondary growth method with a partial a(b)-out-of-plane preferred crystal orientation for the first time. In secondary growth method, titanosilicate ETS-10 crystals were deposited on the substrate from a colloidal suspension to form seed layers. Then, the hydrothermal growth of the seed crystals was conducted to form AM-6 films. It was observed that the AM-6 films formed possess similar 1-D VO 3 2-quantum wires as also observed in powder AM-6 crystals. Afterward, the effect of reaction temperature and amount of water in the secondary growth gel on crystal morphology and a(b)-out-of-plane crystallographic preferred orientation (CPO) were investigated to gain a better understanding of the secondary growth mechanism of vanadosilicate AM-6 films. The results suggested that the increased amount of water leads to increased CPO in the AM-6 films, whereas an increase in reaction temperature from 503 to 528 K leads to more c-oriented AM-6 films with a decreased CPO value. Furthermore, an increase in the reaction temperature led to a decrease in the reaction time, resulting in the formation of quartz impurity. Accordingly, well intergrown a(b)-out-of-plane oriented vanadosilicate films were grown for the first time using ETS-10 seed crystals and it is believed that this work provides an effective pathway for controlling the synthesis of AM-6 films expanding the possible range of applications of these materials possessing 1-D quantum wires.
Oriented vanadosilicate AM-6 thin films with an average thickness of 1-2 lm were prepared on the ITO coated glass substrates using secondary growth method with a partial a(b)-out-of-plane preferred crystal orientation for the first time. In secondary growth method, titanosilicate ETS-10 crystals were deposited on the substrate from a colloidal suspension to form seed layers. Then, the hydrothermal growth of the seed crystals was conducted to form AM-6 films. It was observed that the AM-6 films formed possess similar 1-D VO 3 2-quantum wires as also observed in powder AM-6 crystals. Afterward, the effect of reaction temperature and amount of water in the secondary growth gel on crystal morphology and a(b)-out-of-plane crystallographic preferred orientation (CPO) were investigated to gain a better understanding of the secondary growth mechanism of vanadosilicate AM-6 films. The results suggested that the increased amount of water leads to increased CPO in the AM-6 films, whereas an increase in reaction temperature from 503 to 528 K leads to more c-oriented AM-6 films with a decreased CPO value. Furthermore, an increase in the reaction temperature led to a decrease in the reaction time, resulting in the formation of quartz impurity. Accordingly, well intergrown a(b)-out-of-plane oriented vanadosilicate films were grown for the first time using ETS-10 seed crystals and it is believed that this work provides an effective pathway for controlling the synthesis of AM-6 films expanding the possible range of applications of these materials possessing 1-D quantum wires.
The synthesis and characterization of one-dimensional (1D) semiconductor quantum-confined materials are important, since they have great potential as building blocks for nanoscale electronic devices and other applications. [1][2][3][4][5][6][7][8][9] Among the known 1D semiconductor materials, molecular wires or quantum wires [1][2][3][4][5] are the thinnest 1D quantum-confined materials. However, examples of such quantum wires are rare. Recently, we elucidated the interesting quantum-confinement properties of titanate (TiO 3 2À ) quantum wire [10] regularly placed within a titanosilicate molecular sieve known as ETS-10. [11][12][13] It shows a length-dependent quantum-confinement effect even at length scales longer than 50 nm. [10] Its estimated effective reduced exciton mass along the wire m z is lower than 0.0006 m e (m e = rest mass of electron), which is much lower than the lowest reported values (InSb: 0.014 m e , single-walled carbon nanotubes (SWNT): 0.019 m e ) and indicate much higher exciton mobility along the quantum wire than in InSb and SWNTs. The nature of the electronic absorption of the titanate quantum wire was reportedly oxide-to-Ti IV charge transfer or ligand-to-metal charge transfer (LMCT). [14][15][16] The stretching frequency of the titanate wire increases with increasing electron density of the wire. [14] After elucidation of such important properties of titanate quantum wire, it would be of interest to determine the physicochemical properties of the closely related vanadate (VO 3 2À ) quantum wire. In this regard, the discovery of vanadosilicate AM-6 by Rocha, Anderson, and co-workers in 1997 [17] [designated AM-6-(RA)] is important, since it adopts the ETS-10 structure but with VO 3 2À quantum wires replacing TiO 3 2À quantum wires. Unfortunately, however, ETS-10 crystals were required as seeds to induce ETS-10 structure in the vanadosilicate. Accordingly, AM-6-(RA) inevitably contains ETS-10 crystals within AM-6. Thus, AM-6-(RA) should more strictly be defined as ETS-10 core/AM-6 shell. Furthermore, Lobo, Doren, and co-workers revealed that VO 3 2À quantum wires in AM-6-(RA) are composed of both V 4+ and V 5+ . [18][19][20] As a result, it is intrinsically impossible to elucidate the physicochemical properties of the pure V IV O 3 2À quantum wire. Furthermore, their procedure always simultaneously produces substantial amounts of quartz. Hence, methods to prepare ETS-10-free, pure AM-6 have long been awaited.Twelve years after the report of AM-6-(RA), Sacco, Jr. and co-workers finally developed a method of synthesizing ETS-10-free AM-6. [21] However, they had to use tetramethylammonium ion (TMA + ) as structure-directing agent. Accordingly, this AM-6 contains TMA + ions within the channels. We designate this AM-6 as AM-6-(S)-TMA. We found that AM-6-(S)-TMA also contains both V 4+ and V 5+ (see below). Furthermore, the TMA + ions are tightly encapsulated within and hence completely block the silica channels. As a result, ion exchange of the pristine cations (Na + and K + ) with other cat...
The synthesis and characterization of one-dimensional (1D) semiconductor quantum-confined materials are important, since they have great potential as building blocks for nanoscale electronic devices and other applications. [1][2][3][4][5][6][7][8][9] Among the known 1D semiconductor materials, molecular wires or quantum wires [1][2][3][4][5] are the thinnest 1D quantum-confined materials. However, examples of such quantum wires are rare. Recently, we elucidated the interesting quantum-confinement properties of titanate (TiO 3 2À ) quantum wire [10] regularly placed within a titanosilicate molecular sieve known as ETS-10. [11][12][13] It shows a length-dependent quantum-confinement effect even at length scales longer than 50 nm.[10] Its estimated effective reduced exciton mass along the wire m z is lower than 0.0006 m e (m e = rest mass of electron), which is much lower than the lowest reported values (InSb: 0.014 m e , single-walled carbon nanotubes (SWNT): 0.019 m e ) and indicate much higher exciton mobility along the quantum wire than in InSb and SWNTs. The nature of the electronic absorption of the titanate quantum wire was reportedly oxide-to-Ti IV charge transfer or ligand-to-metal charge transfer (LMCT). [14][15][16] The stretching frequency of the titanate wire increases with increasing electron density of the wire. [14] After elucidation of such important properties of titanate quantum wire, it would be of interest to determine the physicochemical properties of the closely related vanadate (VO 3 2À ) quantum wire. In this regard, the discovery of vanadosilicate AM-6 by Rocha, Anderson, and co-workers in 1997 [17] [designated AM-6-(RA)] is important, since it adopts the ETS-10 structure but with VO 3 2À quantum wires replacing TiO 3 2À quantum wires. Unfortunately, however, ETS-10 crystals were required as seeds to induce ETS-10 structure in the vanadosilicate. Accordingly, AM-6-(RA) inevitably contains ETS-10 crystals within AM-6. Thus, AM-6-(RA) should more strictly be defined as ETS-10 core/AM-6 shell. Furthermore, Lobo, Doren, and co-workers revealed that VO 3 2À quantum wires in AM-6-(RA) are composed of both V 4+ and V 5+. [18][19][20] As a result, it is intrinsically impossible to elucidate the physicochemical properties of the pure V IV O 3 2À quantum wire. Furthermore, their procedure always simultaneously produces substantial amounts of quartz. Hence, methods to prepare ETS-10-free, pure AM-6 have long been awaited.Twelve years after the report of AM-6-(RA), Sacco, Jr. and co-workers finally developed a method of synthesizing ETS-10-free AM-6.[21] However, they had to use tetramethylammonium ion (TMA + ) as structure-directing agent. Accordingly, this AM-6 contains TMA + ions within the channels. We designate this AM-6 as AM-6-(S)-TMA. We found that AM-6-(S)-TMA also contains both V 4+ and V 5+ (see below). Furthermore, the TMA + ions are tightly encapsulated within and hence completely block the silica channels. As a result, ion exchange of the pristine cations (Na + and K + ) with other cation...
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