2014
DOI: 10.1109/tns.2014.2317454
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Fisher Information Analysis of Depth-of-Interaction Estimation in Double-Sided Strip Detectors

Abstract: In very-high-spatial-resolution gamma-ray imaging applications, such as preclinical PET and SPECT, estimation of 3D interaction location inside the detector crystal can be used to minimize parallax error in the imaging system. In this work, we investigate the effect of bias voltage setting on depth-of-interaction (DOI) estimates for a semiconductor detector with a double-sided strip geometry. We first examine the statistical properties of the signals and develop expressions for likelihoods for given gamma-ray … Show more

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Cited by 10 publications
(5 citation statements)
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“…In contrast, the peaks above 20 keV exhibit low-energy tails. This tail structure is caused by the depth dependence of the induced charge due to the charge trapping effect [2,16,17].…”
Section: Anode and Cathode Spectrum Of 241 Ammentioning
confidence: 99%
See 1 more Smart Citation
“…In contrast, the peaks above 20 keV exhibit low-energy tails. This tail structure is caused by the depth dependence of the induced charge due to the charge trapping effect [2,16,17].…”
Section: Anode and Cathode Spectrum Of 241 Ammentioning
confidence: 99%
“…The tail angle θ u is determined as 55.3 • by the PCA on the energy "average vs difference" plot summed over the detector. It is assumed that the tail structure in this case is caused by the events which photons interact very close to the cathode side [16] and the percentage of this event is 5.3%.…”
Section: Reconstruction Algorithm and Improved Spectramentioning
confidence: 99%
“…[56] These offer much higher stopping power for the isotopes commonly used in preclinical and clinical studies and will be used in CGRI’s next-generation systems. [57]…”
Section: Crossed Strip Semiconductor Detectorsmentioning
confidence: 99%
“…One advantage of the DSD configuration compared with the pixel-type detector is that signals can be measured from both anode and cathode strips. Since the µτ products (mobility times lifetime) in CdTe differ by * Email Address: shunsaku.nagasawa@ipmu.jp a factor of ten between holes and electrons, the amounts of signals accumulated on the cathode and anode sides differ according to the depth of the interaction point (DoI) [2,3]. If a photon interacts with the detector at a point close to the anode side, for example, more holes are trapped, and the signal on the cathode side, i.e., the total energy, will be weaker than that on the anode side.…”
Section: Introductionmentioning
confidence: 99%