Indium–zinc
oxide (IZO) films were deposited via flame spray pyrolysis (FSP) by
pulsewise shooting a Si/SiO2 substrate directly into the
combustion area of the flame. Based on UV–vis measurements
of thin-films deposited on glass substrates, the optimal deposition
parameters with respect to low haze values and film thicknesses of
around 100 nm were determined. Thermal annealing of the deposited
films at temperatures between 300 and 700 °C was carried out
and staggered bottom gate thin-film transistors (TFT) were fabricated.
The thin films were investigated by scanning electron microscopy,
atomic force microscopy, X-ray diffraction, Fourier transformed infrared
spectroscopy, and room-temperature photoluminescence measurements.
The outcome of these investigations lead to two major requirements
in order to implement a working TFT: (i) organic residues from the
deposition process need to be removed and (ii) the net free charge
carrier concentration has to be minimized by controlling the trap
states in the semiconductor. The optimal annealing temperature was
300 °C as both requirements are fulfilled best in this case.
This leads to field effect transistors with a low hysteresis, a saturation
mobility of μSat = 0.1 cm2/(V s), a threshold
voltage of V
th = −18.9 V, and an I
on/I
off ratio on
the order of 107. Depending on thermal treatment, the defect
density changes significantly strongly influencing the transfer characteristics
of the device.