Flash Lamp Annealing of Phosphorus-Implanted Silicon

Raman image measurements have been carried out to characterize the spatial variation in the crystallinity of silicon crystals which are ion-implanted and subsequently flash-lamp annealed. The spatial distributions of the peak frequency, band width, and normalized intensity (Raman parameters) have been examined for samples lamp annealed at different temperatures from 600 to 1100 °C. For specimens annealed at temperatures higher than 800 °C, the Raman parameters are constant and the same as those of silicon crystals in almost all areas. However, in sparse regions with a few micron in size, a broad band shifted to the lower frequency side of the crystalline band is observed. The Raman parameters of the broad band change with location within the small region. These results of the Raman imaging, together with the result of transmission electron microscopy, show that these small areas correspond to high defect density clusters located in the outer surface of the annealed layer. It is concluded that the high density of defects within the clusters introduces the shift and broadening of the band relevant to the clusters.

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Flash Lamp Annealing of Phosphorus-Implanted Silicon

Cited by 2 publications

References 3 publications

Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

Raman image study of flash-lamp annealing of ion-implanted silicon

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