Flash lamp annealing technology for ultra-shallow junction formation

Ito, Takayuki; Suguro, K.; Tamura, Masataka; Taniguchi, T.; Ushiku, Y.; Iinuma, T.; Itani, T.; Yoshida, Masaki; Owada, Tatsushi; Imaoka, Yasuhiro; Murayama, H.; Kusuda, T.

doi:10.1109/iwjt.2002.1225191

Cited by 24 publications

(24 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] In particular, rapid heating is an attractive method for activating a semiconductor because it is important to reduce the thermal budget for fabricating semiconductor devices at a low cost. A high activation ratio and no marked impurity diffusion are also important for fabricating an extremely shallow junction.…”

Section: Introductionmentioning

confidence: 99%

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Hasumi

Nakamura

Yoshidomi

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We report the activation of silicon implanted with phosphorus and boron atoms by microwave annealing using carbon powder as a heat source. Silicon substrates were covered with carbon powder and then irradiated with 2.45 GHz microwaves using a commercial microwave oven. Carbon powder effectively absorbs microwaves and heats itself at 1000°C. Silicon substrates are heated by thermal conduction. We carried out implantations of phosphorus atoms at a concentration of 1.0 ' 10 15 cm %2 at 75 keV and boron atoms at a concentration of 1.0 ' 10 15 cm %2 at 25 keV for p-and n-type silicon substrates, respectively. Microwave annealing at 1000 W for 120 s achieved sheet resistivities of 140 and 85 Ω/sq for the phosphorus-and boron-implanted samples, respectively. It also realized the recrystallization of surface amorphized regions caused by implantation. Moreover, low surface recombination velocities of 3.8 ' 10 2 and 2.7 ' 10 2 cm/s were obtained at the top implanted surfaces for the phosphorus-and boron-implanted samples, respectively. Typical diode rectified characteristics and solar cell characteristics with a conversion efficiency of 10.1% were successfully obtained.

show abstract

Section: Introductionmentioning

confidence: 99%

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Hasumi

Nakamura

Yoshidomi

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…A high activation ratio and no serious impurity diffusion are required to fabricate an extremely shallow source/drain extension (SDE) region with a depth of 10 nm order in metal-oxide-semiconductor (MOS) transistor devices for the 45 nm node and below, which cannot be achieved by conventional rapid thermal annealing (RTA). [1][2][3][4] Activation of impurity atoms in deep silicon region is also important to fabricate devices such as insulated gate bipolar transistors (IGBTs). A method of excimer laser annealing for about 10 À9 s has been developed for this purpose.…”

Section: Introductionmentioning

confidence: 99%

Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing

Ukawa

Kanda

Sameshima

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We report the activation of silicon implanted with phosphorus and boron atoms by infrared semiconductor laser annealing using carbon films as an optical absorption layer. 2-mm surface region was heated above 1000 C longer than 22 ms by scanning the laser beam for a dwell time of 40 ms. We carried out implantations of 1 Â 10 15 cm À2 phosphorus atoms at 100, 300, and 500 keV, and boron clusters with a boron concentration of 1 Â 10 15 cm À2 at 6 keV. Laser irradiation at 375 kW/cm 2 was conducted to activate impurities. Secondary ion mass spectrometry measurement revealed that laser annealing caused no substantial change in the phosphorus and boron atom profiles. Laser-induced recrystallization of surface amorphized regions caused by the ion implantation was analyzed using the optical reflectivity spectra ranging from 250 to 1000 nm. The free carrier absorption analyses indicated that the phosphorus and boron atoms were effectively activated by laser annealing.

show abstract

“…The B + and BF 2 + ions were implanted into n − -Si (100) wafers for pn junctions after implant activation RTA. The ion dose was fixed at 1.0×10 15 cm −2 for all implanted Si wafers. The list of implanted Si wafers and their implant conditions are summarized in Table I.…”

Section: Si Wafermentioning

confidence: 99%

“…As + 70keV 1.0x10 15 Most of emitted photons from the Xe arc lamp contribute to wafer heating. Consequently, the wafer heating is very fast and efficient.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (2) P1-mentioning

confidence: 99%

Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Yoo¹,

Kang²

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

A surface heat-treatment method for semiconductor wafers using a xenon arc lamp is described. High absorption coefficients of silicon wafers in ultra violet (UV) region and short process time made selective surface heating possible. The surface melting of entire 150 mm diameter Si wafers was demonstrated in less than 2 s at a lamp power of 15 kW. By focusing UV light into a limited area on Si wafer surface, surface melting of a selectively exposed area was demonstrated at a much lower lamp power. The surface temperature ramp rate is estimated to be on the order of 1000 • C/s. Si wafers, with various implanted species (P + , As + , B + and BF 2 + ) and energies (1 keV-70 keV), were annealed for implant damage recovery and electrical activation using the Xe lamp under different scanning speeds. Sheet resistance and secondary ion mass spectroscopy (SIMS) depth profiling measurement results from the scanning rapid thermal annealing (RTA) successfully demonstrated the feasibility of the technique in semiconductor RTA processing applications. Electrical activation with desired levels of dopant diffusion can be achieved by optimizing process variables such as lamp power, distance between the lamp and Si wafer, area of light exposure and scanning speed. Rapid thermal annealing (RTA) is one of the hottest areas of interest in advanced Si device fabrication. Typical RTA systems employ either halogen lamps or a resistively heated furnace or susceptor as heat source. The lamp-based RTA systems have an excellent lot size flexibility as well as flexibility in controlling a process temperature profile while they have very poor energy efficiency and require complicated temperature measurement/control algorithms.1 Although the resistive heating-based RTA systems do not provide the same lot size flexibility, they provide equivalent process results at much higher energy efficiency. 2A very fast wafer heating and cooling, called "spike anneal" is proposed to electrically activate implant species while suppressing unwanted dopant diffusion during (ultra)shallow junction implant anneal.3,4 However, conventional tungsten halogen lamp-based RTA techniques heat the Si wafer and wafer temperature ramp up and ramp down rate are limited to ∼200• C/s and ∼90 • C/s, due to the balance amongst the heating/cooling characteristics of tungsten filaments, heat capacity of Si wafer and heat loss from the wafer, and so on. Increase in lamp power and/or number of lamps simply do not improve wafer temperature ramp up and ramp down characteristics. 5,6 Large size wafers make the fast wafer heating and cooling more difficult in conventional tungsten halogen lamp-based RTA techniques. The spike anneal using Ar arc lamp has been demonstrated. The reported wafer temperature ramp rate and cooling rate were 400• C/s and 180 • C/s, respectively. 5,7In advanced Si devices, all the active device regions are located at the top surface (up to 1 μm from the surface) of 600 ∼ 800 μm thick Si wafers. Selective surface heat-treatment is ideal from the viewpoint of f...

show abstract

Flash lamp annealing technology for ultra-shallow junction formation

Cited by 24 publications

References 1 publication

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing

Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Contact Info

Product

Resources

About