Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

Jin, Hyeong Min; Park, Dae Yong; Jeong, Seong‐Jun; Lee, Gil Yong; Kim, Ju Young; Mun, Jeong Ho; Keun, Seung; Lim, Joonwon; Kim, Jun Soo; Kim, Kwang Ho; Lee, Keon Jae; Kim, Sang Ouk

doi:10.1002/adma.201700595

Cited by 88 publications

(66 citation statements)

References 75 publications

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“…Initial interest in mesoscopic self‐assembly was inspired by the structures and mechanisms observed in the chemical, materials, and biological sciences, and mainly focused on the self‐assembly of atomic and molecular structures necessary for the synthesis of membranes, crystals, molecular monolayers, and polymeric ordered structures . The chemomolecular self‐assembly, being a one or two step process, provided strategies for static and dynamic generation of nanostructures of diverse functionalities such as macromolecular and metal organic assemblies, assembly of graphene sheets and foams, nanotubes, nanocolloids, nanomachines, and nanohedgehogs .…”

Section: Mesoscopic Self‐assemblymentioning

confidence: 99%

“…(Adapted with permission . Copyright 2018, Elsevier B.V.) Similarly, c) Artificial self‐assembled architectures are formed from block copolymers at nanoscale (1 ‐ Adapted with permission . Copyright 2017, Wiley‐VCH Verlag GmbH & Co. KGaA), polygonal (2 ‐ Adapted with permission .…”

Section: Introductionmentioning

confidence: 99%

“…By mimicking the self‐assembly and shapeability features of biological systems, a variety of artificial mesoscopic architectures, passive and active electronics, optical and magnetic functional blocks, and even entire systems were constructed (Figures c and c). With the help of compatible lithographic techniques and, more importantly, development of novel lithographically processable strain‐engineering materials and composites, the self‐assembly of micro‐ and nanoscale 3D architectures can be obtained by the shaping of initially planar structures .…”

Section: Introductionmentioning

confidence: 99%

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Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Karnaushenko

Kang

Schmidt

2019

Adv Materials Technologies

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simple transistors and logics to highly integrated microcontrollers and displays, the latter of which utilizes some of the most technologically advanced processes available in the industry. [3] The success of these technologies has been achieved through enhanced integration of various active functional blocks such as transistors, digital logics, and analog circuits, along with advances in miniaturization and simplification of the overall manufacturing process, eventually leading to large scale, parallel fabrication of silicon chip-based microelectronic components and systems. [4,5] However, many of the manufacturing steps in assembling these electronic components remain either semiparallel or sequential in nature, including processes as dicing, pick and place, packaging, and final assembly of the device. Each additional sequential step increases costs and should ideally be avoided, however substantial streamlining is not always feasible in complex manufacturing processes. [6] More critically, highly integrated silicon-based devices still require several external supporting components for their operation such as wiring, powering, sensing, and communications that cannot be easily integrated within the planar surface of a silicon die. Thus, sensors, actuators, capacitors, coils, antennas, and optics, each crucial for the complete system, are typically placed separately from the silicon chip onto a printed circuit board (PCB), or integrated within another package (Figure 1a). While the need for ever decreasing sizes has demanded tremendous investments and efforts in the manufacture of completed assemblies, the miniaturizing of 3D electronic components (Figure 1b) and systems has nevertheless reached the range of mesoscopic sizes (<1 mm) where the manufacture and assembly of components experience challenges with respect to yield, costs, and reliability. [7] As a result, these issues limit the fabrication potential and commercial viability of components and systems to scales around 1 mm, [8] and despite efforts to improve the planar construction of mesoscopic 3D devices, the results are seen as inefficient and experience difficulties in achieving high performances while maintaining reasonable complexity. Despite the great success in manufacturing active electronics, such concerns are strongly related to the fabrication of passive electronic components like inductors, capacitors, antennas, and resonators where material properties (e.g., mechanical, magnetic, and electrical) and geometry play a crucial role. [8,9] In order to downscale these devices further and improve integration with active electronics, novel fabrication strategies are required.Electronic devices and their components are continually evolving to offer improved performance, smaller sizes, lower weight, and reduced costs, often requiring the state-of-the-art manufacturing and materials to do so. An emerging class of materials and fabrication techniques inspired by self-assembling biological systems shows promise as an alternative to the more traditional m...

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Section: Mesoscopic Self‐assemblymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Karnaushenko

Kang

Schmidt

2019

Adv Materials Technologies

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“…In this respect, dots and stripes, two basic elements of lithographic patterns, can be obtained from BCP thin films featuring cylinders and lamellae perpendicularly oriented with respect to the substrate . Thus, the control of the domain orientation represents an essential key for the technological application of these materials in lithographic processes.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Density of Reactive Sites in P(S‐r‐MMA) Film during Al₂O₃ Growth by Sequential Infiltration Synthesis

Caligiore¹,

Nazzari

Cianci³

et al. 2019

Adv Materials Inter

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than simply decorating the surface. [2][3][4] SIS allows transforming polymers into organic-inorganic hybrid materials: penetration and reaction of gaseous metal precursors into polymer, during SIS, permit to grow inorganic materials into polymeric films [5] in order to tune some of their features as their optical properties or improve their chemical etch resistance. [6][7][8][9] The SIS process is characterized by two factors: diffusion and entrapment of precursor molecules into the polymer matrix. The most direct method to promote their entrapment is the chemical reaction of penetrant molecules with polymer functional groups in combination with a secondary precursor (coreactant). [4] Thus, the number of reactive sites within the polymer film plays an important role in the determination of the amount of inorganic material grown in the film during the process. Moreover, differently from ALD, the self-terminating reactions are not restricted to the surface sites. Precursor molecules must diffuse into the polymeric film to reach the reactive sites that are distributed in the volume of the polymeric matrix. Consequently, diffusion plays a fundamental part in the kinetics of the infiltration process and needs to be monitored in real time. The most used in situ techniques for investigating the infiltration mechanism are in situ quartz crystal microbalance (QCM) measurements and in situ Fourier transform infrared (FTIR) spectroscopy. [10][11][12][13] In situ dynamic spectroscopic ellipsometry (SE) was recently validated as a valuable tool for real time investigation of the infiltration process in poly(methyl methacrylate) (PMMA) and polystyrene (PS) homopolymers. [14] In situ SE is a noninvasive optical technique frequently used in combination with ALD processes [15][16][17] and for studies of polymer films under several conditions. [18][19][20] During SIS process, in situ SE allows continuous acquisition of information about changes of thickness and refractive index (n) of polymer films without interrupting the process itself on a shorter time scale than in situ FTIR spectroscopic analysis and without the need of ad hoc samples as for QCM measurements. When SIS is performed into self-assembled block copolymers (BCP), [21] the selective binding of precursors to one domain only of BCPs offers the possibility to fabricate inorganic functional nanoarchitectures [22] or hard masks for lithography. [23] Removing polymers by O 2 plasma after Sequential infiltration synthesis (SIS) consists in a controlled sequence of metal organic precursors and coreactant vapor exposure cycles of polymer films. Two aspects characterize an SIS process: precursor molecule diffusion within the polymer matrix and precursor molecule entrapment into polymer films via chemical reaction. In this paper, SIS process for the alumina synthesis is investigated using trimethylaluminum (TMA) and H 2 O in thin films of poly(styrene-random-methyl methacrylate) (P(S-r-MMA)) with variable MMA content. The amount of alumina grown in the P(S-r-MMA) films linear...

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“…Among them, PS‐ b ‐PDMS has been widely investigated for DSA application due to its high χ and high content of Si. [17a,b,21] Also, to overcome slow interdiffusion issue of high‐χ BCPs, various techniques such as warm solvent annealing,[17f,22] warm spin casting,[17e] flash light annealing, and microwave annealing were employed.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

Hur

Song

Kim

et al. 2018

Adv Funct Materials

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The precisely controllable self-assembly phenomenon of block copolymers (BCPs) has garnered much attention because it yields well-defined periodic nanostructures with a periodicity of 5-50 nm. However, from both thermodynamic and kinetic viewpoints, it still remains a challenge to develop a BCP material that can provide sub-10 nm resolution, high pattern quality, fast pattern formation, and sufficient etch selectivity. To address these challenges, this study reports a BCP system containing a random-copolymerized block (poly(2-vinylpyridine-co-4-vinylpyridne)-bpoly(dimethylsiloxane) (P(2VP-co-4VP)-b-PDMS)) that can provide sub-6 nm resolution, 3σ line edge roughness of 0.89 nm, sub-1-min assembly time, and a high etch selectivity over 10. Calculation of the Flory-Huggins interaction parameter (χ) based on Leibler's mean-field theory and smallangle X-ray scattering measurement data confirms the gradual tunability of χ with the controlled addition of 4VP fraction in the P(2VP-co-4VP) block. While guaranteeing kinetically fast self-assembly within one minute using microwave annealing, the best pattern quality resulting from the thermodynamic suppression of line edge fluctuation is achieved with a 4VP weight fraction of 33% in the random-copolymerized block. This approach enables systematical control of sub-6 nm scale BCP self-assembly and will provide a practical patterning solution for diverse nanostructures and devices.

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Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

Cited by 88 publications

References 75 publications

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Effect of the Density of Reactive Sites in P(S‐r‐MMA) Film during Al₂O₃ Growth by Sequential Infiltration Synthesis

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

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Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

Cited by 88 publications

References 75 publications

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Effect of the Density of Reactive Sites in P(S‐r‐MMA) Film during Al2O3 Growth by Sequential Infiltration Synthesis

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

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Effect of the Density of Reactive Sites in P(S‐r‐MMA) Film during Al₂O₃ Growth by Sequential Infiltration Synthesis