Flash Memories

Lin, Frank Ruei-Ling; Shen, Rick Shih-Jye; Yang, En-Yu; Hsu, Charles Ching–Hsiang; Chou, Amy Hsiu-Fen

doi:10.1201/9781420005967.ch54

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“…The primary approach for developing 3D NAND is increasing the number of Si 3 N 4 /SiO 2 multistack layers (Figure a). − However, with the growing stacking of the pair layers, the dielectric SiO 2 layers are susceptible to dissolution by the hot-concentrated phosphoric acid (PA) solution, which is the etchant for the selective Si 3 N 4 etching process (Figure b). − The resultant thinning of SiO 2 layers (Figure c) disrupts the feasibility of subsequent processes . To inhibit SiO 2 etching, additives are considered a promising approach presently.…”

Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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The SiO 2 layers, as the dielectric in the multistack storage cells of 3D NAND, are detrimentally dissolved by phosphoric acid (PA) during the selective Si 3 N 4 etching. The thinning of SiO 2 layers leads to the failure of subsequent processes; thus, an etching inhibitor for SiO 2 is crucial for 3D NAND fabrication. However, most inhibitors are currently limited to neutral or alkaline solutions. In this work, the γ-ureidopropyltriethoxysilane (UPTES), compatible with a hot-concentrated PA solution, was applied to the wet-etching process for the first time and exhibited an inhibitory effect on SiO 2 etching by retarding the etch rate over 60% without affecting the Si 3 N 4 etching. The saturation adsorption of UPTES on the SiO 2 substrate is confirmed to occur around the critical concentration, according to the Langmuir−Freundlich adsorption isotherm. The adsorption behavior of UPTES exhibits a reliance on its concentration. Around the critical concentration, the UPTES molecules chemisorb on the SiO 2 surface by Si−O−Si covalent bonds to form ordered UPTESsiloxane layers, avoiding contact between SiO 2 and the etchant; whereas oversaturated UPTES polymers physisorb not only on SiO 2 but also on Si 3 N 4 , impeding the Si 3 N 4 etching. This work contributes to a step forward in the effective wet-etching process in highdensity 3D NAND fabrication.

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Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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Flash Memories

Cited by 1 publication

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Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

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Flash Memories

Cited by 1 publication

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Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

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Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication