Flash memory under cosmic & alpha irradiation

Abstract

Advanced Micro Devices 1 AMD Place, MS 124, Sunnyvale, CA 94088-3453 1 408 749 5838,l (408) 748-5585 fax, Richard.Blish@AMD.com Type I I polysi I Poly Si I MirrorBiP Part# I I 2YDL640G I 2YLV160D I 2YLV64OMH ABSTRACTNeutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MhorBitTu) soft m r failure rate (cross section) is 4-5 orders of magnitude better than