Flat panel displays for portable systems

Sarma, Kalluri R.; Akinwande, Tayo

doi:10.1007/bf01130404

Cited by 7 publications

(6 citation statements)

References 30 publications

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“…Using the kinetic formulation of field emission, and some simple modifications to the Fowler-Nordheim theory [3,8,13], the current-voltage characteristic obeys the following equation the tip, A = 1.54 x 10 -6 , B = 6.87 x 10 7 . β is the field factor and is defined as…”

Section: Fea Resultsmentioning

confidence: 99%

“…The light doping at the drain region reduces the maximum electric field; consequently, impact ionization and avalanche multiplication are reduced or eliminated. The tip formation process is the similar to the process reported by Ding, et al [3]. The device fabrication is described below.…”

Section: Device Fabricationmentioning

confidence: 96%

“…[1][2][3][4][5]. Silicon FEA technology, while adequate for a number of applications, has two major shortcomings: high addressing voltages and non-uniform, unstable emission current.…”

Section: Introductionmentioning

confidence: 99%

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Silicon Field Emitter Arrays Integrated with MOSFET Devices

Hong

Akinwande

2001

MRS Proc.

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We report a metal oxide semiconductor field effect transistor (MOSFET) controlled field emission array (FEA) device. The device uses a lateral double diffused MOSFET (LD-MOSFET) to control electron supply to the surface. The FEAs were fabricated using isotropic etch of silicon, oxidation sharpening and chemical mechanical polishing. The LD-MOSFETs have a threshold voltage of 0.48V while the FEAs have a turn-on voltage of 28V. Analysis using the FN formulation indicates that a silicon tip radius of 11 nm would fit the FEA IV data. The tip radius from the electrical data is very close to the average tip radius of 10 nm obtained from transmission electron microscope (TEM) analysis. The IV characterization of the MOSFET/FEA demonstrated control of electron emission by the MOSFET gate voltage.

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Section: Fea Resultsmentioning

confidence: 99%

Section: Device Fabricationmentioning

confidence: 96%

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Silicon Field Emitter Arrays Integrated with MOSFET Devices

Hong

Akinwande

2001

MRS Proc.

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“…L IGHT emissive technologies currently being investigated for flat panel displays [1] (FPDs) include: field emission display (FED), plasma display panel (PDP), inorganic thin-film electroluminescence (TFEL), and organic light emitting diode (OLED). ZnS:Mn TFEL [2], [3] flat panel displays are well known for their superior readability and durability.…”

Section: Introductionmentioning

confidence: 99%

“…Most display applications, however, must take into account the reflected luminance from ambient light (illumination). This true measure of display contrast [4], or contrast ratio (CR), is defined for a Lambertian emitter/reflector as with (1) is the diffuse luminous reflectance of the ambient illumination . is the absolute reflectivity weighted against the spectral (photopic) response of the human eye versus wavelength.…”

Section: Introductionmentioning

confidence: 99%

Contrast-enhancement in black dielectric electroluminescent devices

Heikenfeld¹,

Steckl²

2002

IEEE Trans. Electron Devices

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A high contrast electroluminescent (EL) device structure is presented. The diffuse luminous reflectivity from the metal/dielectric/phosphor/indium-tin-oxide/glass EL device structure is 3%. A Eu-doped GaN phosphor is used to demonstrate the contrast-enhanced operation. Low reflectivity is achieved by inserting a light-absorbing black thick-film BaTiO 3 layer between the phosphor and the rear metal electrode. In addition to providing contrast enhancement, the opaque thick dielectric film exhibits capacitance and high voltage reliability (40 nF/cm 2 , dielectric constant 500-1000, breakdown field 0 1-0 4 MV/cm) similar to that of the highest performance transparent thin-film dielectrics. An EL device luminance of only 20 cd/m 2 is sufficient for a display contrast ratio of 10:1 under 140 lux indoor ambient lighting (illumination). Under sunlight illumination of 100 000 lux, a display contrast ratio of 3:1 is expected with application of additional contrast enhancement techniques.

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Moving Up to the Modeling Level for the Transformation of Data Structures in Embedded Multimedia Applications

Temmerman

Daylight

Catthoor

et al. 2005

Lecture Notes in Computer Science

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Traditional design-and optimization techniques for embedded devices apply local transformations of source-code to maximize the performance and minimize the power consumption. Unfortunately, such transformations cannot adequately deal with the highly dynamic nature of the today's multimedia applications as they do not exploit application specific knowledge. We decided to go one step back in the design process. Starting from the original UML (Unified Modeling Language) model of the source code, we transform the UML model first before refining it into executable code. In this paper we present (i) the transformation of various UML models, (ii) a fast technique for the estimation of the high-level cost parameters that steer our transformations, and (iii) experiments based on three case-studies (a Snake game, a Tetris game and a 3D rendering engine) that show that our transformations can result in factors improvement in memory footprint and/or execution time with respect to the original model.

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Flat panel displays for portable systems

Cited by 7 publications

References 30 publications

Silicon Field Emitter Arrays Integrated with MOSFET Devices

Silicon Field Emitter Arrays Integrated with MOSFET Devices

Contrast-enhancement in black dielectric electroluminescent devices

Moving Up to the Modeling Level for the Transformation of Data Structures in Embedded Multimedia Applications

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