Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Maeng, W. J.; Kim, Woo Hee; Koo, Ja Hoon; Lim, Soo-Jeong; Lee, Chang‐Soo; Lee, Taeyoon

doi:10.1063/1.3330929

Cited by 14 publications

(13 citation statements)

References 15 publications

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“…Overall, our results summarized in table VI are in a qualitative agreement with the recent experiments [6][7][8][9][10][11][12][13][14][15][16][17], and we need to identify the microscopic mechanism of the doping effect.…”

Section: Band Alignment and Charge Transfersupporting

confidence: 78%

“…In particular, group III metals have been suggested to modify the interfacial dipole. For example, La has been used for the n-type silicon field effect transistors (FETs) [6,[8][9][10][11] and Al for the p-type FETs [7,[12][13][14][15][16][17]. The doping can be achieved, for instance, via the ion diffusion from a thin metal oxide capping layer deposited on top of the HfO 2 -based dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Luo

Bersuker²,

Demkov

2011

Phys. Rev. B

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Abstract:Using density functional theory we examine the effect of Al and La incorporation on the electronic properties of the interface in the SiO 2 /HfO 2 high-k gate stacks recently introduced into the advanced modern field effect transistors. We show that La and Al doping have opposite effects on the band alignment at the SiO 2 /HfO 2 interface: while the Al ions, which substitute preferentially for Si in the SiO 2 layer, promote higher effective work function (EWF) values, the substitution of La for Hf decreases EWF. The analysis of the electronic structure of the doped interface suggests a simple relation between the electronegativity of the doping metal, screening properties of the interfacial layer and the band offset, which allows predicting qualitatively the effect of the high-k gate stack doping with a variety of metals on its EWF.

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Section: Band Alignment and Charge Transfersupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Luo

Bersuker²,

Demkov

2011

Phys. Rev. B

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“…5). 35 Finally, we note that Fig. 5 portrays a roughly linear relationship between the work function shift and the dopant electronegativity (with opposite slopes depending on the actual interfacial location of the dopant).…”

Section: Modulation Of / Ef F Due To Atomic Dopantsmentioning

confidence: 80%

Interface engineering through atomic dopants in HfO2-based gate stacks

Zhu

Ramanath

Ramprasad

2013

Journal of Applied Physics

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Controlling the effective work function (/ ef f) of metal electrodes is critical and challenging in metal-oxide-semiconductor field effect transistors. The introduction of atomic dopants (also referred to as "capping" layers) is an emerging approach to controllably modify / ef f. Here, we investigate the energetic preference of the location of La, Y, Sc, Al, Ce, Ti, and Zr as atomic dopants within a model Pt/HfO 2 /Si stack and the resulting variation of / ef f using density functional theory calculations. Our results indicate that all the considered atomic dopants prefer to be situated at the interfaces. The dopant-induced variation of / ef f is found to be strongly correlated to the dopant electronegativity and location. Dopants at the metal/HfO 2 interface decrease / ef f with increasing dopant electronegativity, while a contrary trend is seen for dopants at the Si/HfO 2 interface. These results are consistent with available experimental data for La, Al, and Ti doping. Our findings, especially the identified correlations, have important implications for the further optimization and "scaling down" of transistors. V

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“…To date, improvements in p‐channel SnO FETs have been achieved by optimizing various processes such as deposition pressure, oxygen partial pressure, hydrogen containing atmosphere, annealing conditions, and metal electrodes . On the other hand, the tailoring of the interfacial properties between the p‐type SnO and gate dielectric has not been attempted for high performance FETs even though the inferior properties, including the high I OFF and V TH in the SnO devices, can be attributed to the inappropriate interfacial state traps …”

Section: Comparison Of the Device Parameters For The Sno Fets With Vamentioning

confidence: 99%

Impact of an Interfacial Layer on the Electrical Performance of p‐Channel Tin Monoxide Field‐Effect Transistors

Han

Kim

Jeong

et al. 2017

Physica Rapid Research Ltrs

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This study examined the insertion effect of an interfacial, 7-nm-thick SiN x and SiOF layer on the performance of p-channel tin monoxide (SnO) fieldeffect transistors (FETs). The control SnO FETs, which had a thermal SiO 2 gate dielectric, exhibited a mobility, gate swing, threshold voltage (V TH ) and I ON/OFF ratio of 2.8 cm 2 V À1 s À1 , 6.9 V decade À1 , 19.0 V, and 1.8 Â 10 3 , respectively. The SiN x -inserted SnO FETs showed a loss in drain current modulation due to the creation of interfacial trap states. In contrast, the gate swing and V TH values were improved substantially to 5.4 V decade À1 and 2.0 V for the SiOF-inserted SnO FETs, respectively, whereas the comparable mobility and I ON/OFF ratio were preserved. The rationale of the improvement is discussed with respect to Fermi-energy pinning based on the valence band spectra.

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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Cited by 14 publications

References 15 publications

Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Interface engineering through atomic dopants in HfO2-based gate stacks

Impact of an Interfacial Layer on the Electrical Performance of p‐Channel Tin Monoxide Field‐Effect Transistors

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