Flexible active-matrix displays and shift registers based on solution-processed organic transistors

Gelinck, Gerwin H.; Huitema, H. E. A.; Veenendaal, E. van; Cantatore, Eugenio; Schrijnemakers, L.; Putten, J.B.P.H. van der; Geuns, Tom C. T.; Beenhakkers, Monique J.; Giesbers, Jacobus B.; Huisman, Bart-Hendrik; Meijer, E.J.; Benito, Estrella Mena; Touwslager, F. J.; Marsman, Albert W.; Rens, Bas J. E. van; Leeuw, Dago M. de

doi:10.1038/nmat1061

Cited by 1,521 publications

(858 citation statements)

References 29 publications

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“…The switching speeds is sufficient for sensor and display applications [33][34][35] . Faster switching times may be realized by designing circuits with shorter channel lengths and minimizing the parasitic capacitance.…”

Section: Discussionmentioning

confidence: 99%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from highperformance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm 2 V À 1 s À 1 , current modulation 410 6 and subthreshold swing of 0.28 Vdec À 1 . We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

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Section: Discussionmentioning

confidence: 99%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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“…Electronic or optoelectronic components on flexible substrates enable novel applications, such as flexible display, electronic textile, artificial electronic skin, distributed sensors, etc 1, 2, 3, 4, 5, 6, 7, 8, 9. Whilst various flexible electronics are commercially available nowadays, the development of flexible energy and power sources for these devices is slow 10, 11.…”

Section: Introductionmentioning

confidence: 99%

Paper‐Based Electrodes for Flexible Energy Storage Devices

et al. 2017

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Paper‐based materials are emerging as a new category of advanced electrodes for flexible energy storage devices, including supercapacitors, Li‐ion batteries, Li‐S batteries, Li‐oxygen batteries. This review summarizes recent advances in the synthesis of paper‐based electrodes, including paper‐supported electrodes and paper‐like electrodes. Their structural features, electrochemical performances and implementation as electrodes for flexible energy storage devices including supercapacitors and batteries are highlighted and compared. Finally, we also discuss the challenges and opportunity of paper‐based electrodes and energy storage devices.

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“…Much attention has focussed on realizing electrically and environmentally stable OTFTs required to successfully implement complex systems such as radio frequency identification (RFID) tags 10,[13][14][15][16] . An avenue that has received far less attention, despite carrying tremendous promise, is the "controllable" manipulation of the transistor functionality beyond that of a switch or amplifier.…”

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confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

116

121

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Citation for published item:furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVF Further information on publisher's website:httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQH Publisher's copyright statement: his is the epted version of the following rti leX furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVD whi h h s een pu lished in (n l form t httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQHF his rti le m y e used for nonE ommer i l purposes in ord n e ith ileyE gr erms nd gonditions for selfE r hivingFAdditional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we report on a novel concept of an electrically programmable selfassembled molecular gate dielectric layer for OTFTs (see figure 1a) that can be reversibly charged and discharged and retains these digital states even when the supply voltage is removed. Due to the small thickness of the dielectric stack (app. 5.7 nm), the memory transistors operate with very small program and erase voltages of ± 2 V. Despite the extremely small dielectric thickness, the retention time is already promising (~6 hours with a read voltage of -750 mV applied continuously). The dielectric is a mixed monolayer of aliphatic and C 60 -functionalized phosphonic acid molecules (app. 2.1 nm thickness) on a patterned and plasma-oxidized aluminum gate electrode on a glass substrate. The aluminum oxide (AlO x ) contributes with a thickness of 3.6 nm to the dielectric layer stack 6 . As the aliphatic component, n-octadecylphosphonic acid 1 was chosen, which has already shown excellent insulating characteristics as the gate dielectric 6 . As the charge storage component, the C 60 -derivative 2 was synthesized to take advantage of the strong acceptor properties and reversible redox behavior of C 60 (Figure 1b and Supplementary Information SI-1) and of the self-assembly properties induced by the C 18 -aliphatic tail with phosphonic acid anchor group.Mixed self-assembled monolayers of 1 and 2 were created by a simple "one pot" solution content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices

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Flexible active-matrix displays and shift registers based on solution-processed organic transistors

Cited by 1,521 publications

References 29 publications

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Paper‐Based Electrodes for Flexible Energy Storage Devices

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

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