Flexible All-Inorganic Perovskite CsPbBr₃ Nonvolatile Memory Device

Abstract

All-inorganic perovskite CsPbX (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures

“…From the linear plot of the I-V curves, the I-V characteristics in the LRS only exhibited a linear region (Figure 4a). [20] Another evidence to exhibit RS behavior with conducting filaments is that all of the Ag/Rb x MA 1−x PbI 3 /Pt devices showed similar resistances in LRS regardless of the concentration of the nonswitchable RbPbI 3 (Figure 3g-j). Because the current flow is governed by the conducting bridge, the resistance of typical metallic filamentbased resistive switching devices in LRS follows the temperature dependence of metals, which means that the resistance of the metallic filament is proportional to temperature.…”

“…[9,16] These outstanding properties are suitable for next-generation resistive switching memories. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance.…”

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

“…[44] In a cross-point array, this should be solved. Cesium-hybridized solar cells and all-inorganic CsPbBr 3 -based resistive switching memory devices fabricated using solution process have been reported, [50,51] and recently, a vacuum codeposition method [52] was introduced to fabricate efficient Cs-based inorganic perovskite solar cells. [46] Moreover, various selector materials have been developed, [47][48][49] so in the future selector devices may be integrated with the perovskite memory devices.…”

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

“…[14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance.…”