Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Zhu, Weinan; Yogeesh, Maruthi N.; Yang, Shixuan; Aldave, Sandra H.; Kim, Joon‐Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

doi:10.1021/nl5047329

Cited by 400 publications

(398 citation statements)

References 66 publications

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“…4e). The robust piezo-resistive response, combined with the excellent stretchability demonstrated elsewhere 18 , makes black phosphorus potentially useful in detecting local strain in Micro-Electro-Mechanical Systems (MEMS) and flexible electronics 31 34 . Finally, we note that sample degradation remains a challenge for stable sensor performance in air over long periods of time (Supplementary Information).…”

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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Zhang¹,

et al. 2017

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Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus 1 5 , the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit 3,6 8 . Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.Under mechanical strain, the deformation of the atomic lattice is able to induce profound changes in the electronic structure of a crystalline material. This is best exemplified in doped silicon, where strain alters the energy bands of electron or hole carriers; the transfer of carriers to bands with small effective mass leads to drastic enhancement of carrier mobility (and thus conductivity) 9 13 . Strained silicon is, therefore, able to provide improved switching performance as the transistor dimension is aggressively scaled down in modern electronics 14,15 . Meanwhile, the large resistance response under strain has enabled the development of a myriad of silicon-based transducers 16 , such as strain and torque gauges, that are widely used in industrial applications. Page 3 of 17Black phosphorus, a two-dimensional (2D) material with a puckered honeycomb lattice, offers new possibilities. The puckered lattice in a monolayer, shown in Fig. 1a, can be viewed as rows of two orthogonally coupled hinges along the zigzag direction 17 . The structure makes black phosphorus a soft, and yet mechanically resilient, material that can withstand large strain modulation 18 . More importantly, deformation of the puckers under strain changes the configuration of pz orbitals near the band edges 19 ; modulating the black phosphorus bandgap (and therefore its material properties) via strain becomes a possibility. Indeed, it has been shown that a moderate high pressure of ~1.2 GPa can close the bandgap, and raise the conductance by one order of magnitude at room temperature 20 ; modulation of the optical properties was also observed in corrugated black phosphorus sheets 21 . Those studies hinted at strain as a powerful tool to modulate the electronic and optical properties of black phosphorus.Here, we observe a large piezo-resistive effect in black phosphorus FETs at room temperature. The piezo-resistive response (defined as the relative change in sample resistance, , at a given strain, ) varies with the gate doping, and reac...

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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Zhang¹,

et al. 2017

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“…The choice of carbon structure was found to play an essential role in the formation of stable P–C bonds, with graphite the best, retaining a reversible capacity of 1840 mAh g −1 after 100 cycles. Very recently, the discovery of a new 2D compound, monolayer black P, has attracted a great deal of attention 124. Monolayer black P is, besides graphene, the only stable 2D elemental material that can be mechanically exfoliated 125.…”

Section: Multi‐electron Reactions In Libs and Nibsmentioning

confidence: 99%

Advanced High Energy Density Secondary Batteries with Multi‐Electron Reaction Materials

et al. 2016

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Secondary batteries have become important for smart grid and electric vehicle applications, and massive effort has been dedicated to optimizing the current generation and improving their energy density. Multi‐electron chemistry has paved a new path for the breaking of the barriers that exist in traditional battery research and applications, and provided new ideas for developing new battery systems that meet energy density requirements. An in‐depth understanding of multi‐electron chemistries in terms of the charge transfer mechanisms occuring during their electrochemical processes is necessary and urgent for the modification of secondary battery materials and development of secondary battery systems. In this Review, multi‐electron chemistry for high energy density electrode materials and the corresponding secondary battery systems are discussed. Specifically, four battery systems based on multi‐electron reactions are classified in this review: lithium‐ and sodium‐ion batteries based on monovalent cations; rechargeable batteries based on the insertion of polyvalent cations beyond those of alkali metals; metal–air batteries, and Li–S batteries. It is noted that challenges still exist in the development of multi‐electron chemistries that must be overcome to meet the energy density requirements of different battery systems, and much effort has more effort to be devoted to this.

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“…However, the absence of a band gap in graphene [3] impedes the achievement of a good ON/OFF ratio in nanodevices [4]. Following graphene, other two-dimensional van der Waals semiconductors, combining finite band gaps [5,6] and flexibility [7,8] are emerging in recent years as the most promising materials for nanoelectronics [4,9]. Topological insulators (TIs) are a class of innovative materials, whose physical properties have enormous potential for technological applications [10].…”

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2017

IJBSBE

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Herein, the application capabilities of novel topological phases of matter in the field of bioelectronics and biosensors are assessed. Topological insulators could enable a novel generation of biosensors, exploiting the reduction of the low-frequency noise arising from the suppressed backscattering. Case-study examples of biosensors based on bismuth chalcogenides are discussed.Keywords: Topological insulators; Biosensors; Bioelectronics; Low-frequency noise OpinionBiosensors are devices of great importance for medical diagnostics, therapy monitoring, environmental science, biotechnology etc. The recent achievements in this fields are based on research on (i) materials and (ii) optimization of processes. By adopting standard solutions, further noteworthy advancement is unfeasible. Conversely, unexplored materials could provide interesting perspectives. The isolation of graphene in 2004 has paved the way for disruptive technologies based on twodimensional materials [1,2]. However, the absence of a band gap in graphene [3] impedes the achievement of a good ON/OFF ratio in nanodevices [4]. Following graphene, other two-dimensional van der Waals semiconductors, combining finite band gaps [5,6] and flexibility [7,8] are emerging in recent years as the most promising materials for nanoelectronics [4,9]. Topological insulators (TIs) are a class of innovative materials, whose physical properties have enormous potential for technological applications [10].TIs represent unique phases of matter with semiconducting bulk and conducting edge or surface states, immune to small perturbations, such as backscattering due to disorder. This stems from their peculiar band structure, which provides topological protection. Moreover, electron spin and momentum in topologically protected states are locked, thus enabling (i) the control of electron flow and (ii) the reduction of low-frequency noise in TI-based electronic devices [11]. As a matter of fact, the suppression of the backscattering of spin-polarized charge carriers of surface states, with the subsequent suppression of the fluctuation of mobility of surface-state charge carriers, could reduce electronic noise, so as to lower the detection limits of sensors below those already reported [11].Despite great interest from the scientific community, the huge potential of TIs for technological applications has been just started to be exploited [12]. Recent works report superb performance in TI-based nanodevices [13], also thanks to the progress in the control of single-crystal quality during the TI growth process. Among TIs, layered bismuth chalcogenides have attracted much attention since they can be easily grown by Bridgman-Stockbarger method and, moreover, since they show TI properties at room temperature [13].

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Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Cited by 400 publications

References 66 publications

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Advanced High Energy Density Secondary Batteries with Multi‐Electron Reaction Materials

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