Flexible Complementary Oxide–Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors

Li, Yun-Shiuan; He, Jyun-Ci; Hsu, Shu-Shong; Lee, Cheng-Che; Su, Dung-Yue; Tsai, Fujung; Cheng, I-Chun

doi:10.1109/led.2015.2501843

Cited by 64 publications

(28 citation statements)

References 22 publications

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“…The voltage gain at VDD = 10 V reaches as high as 112 (Fig. 2(c)), which is the highest value among complementary inverters using n-and p-type oxide TFTs below 10 V supply voltage [2,3,12,13,15,16,18,24]. The threshold voltage of the inverter, where Vin = Vout, is found to be 1.97 V and 4.25 V at VDD = 5 V and 10 V, respectively.…”

Section: Introductionmentioning

confidence: 91%

“…From the point of industrial application, high gain of complementary inverter is quite desirable in order to achieve large noise margins of the integrated circuits. However, to the best of our knowledge, the gains of the reported complementary inverters based on n-and p-type oxides are not higher than 30 under a supply voltage of 10 V until now [2,3,12,13,15,16,18,24] high-performance n-type IGZO TFTs and p-type SnO TFTs via room-temperature sputtering method which is suitable for large-scale fabrication and commercialization for transparent/flexible electronics. Moreover, we realized the integration of SnO and IGZO TFTs to achieve complementary inverters with extremely high voltage gain up to 112.…”

Section: Introductionmentioning

confidence: 93%

“…The static current will also result in a static power consumption, which may be an issue in the case of large scale integration. Complementary inverters using n-type oxide (such as In2O3, SnO2, IGZO, and ZnO) TFTs and p-type SnO TFTs have been reported [12][13][14][15][16][17][18][19]. Five-stage ring oscillators based on n-type ZnO and p-type SnO TFTs have been fabricated on glass and polyimide foil substrates [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Liu

Yang

Wang

et al. 2018

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Liu

Yang

Wang

et al. 2018

IEEE Electron Device Lett.

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“…Thus, recent reports have shown that unipolar circuit technology based on oxide semiconductors can be employed for NFC and RFID applications [12,13]. However, the use of complementary metal-oxide-semiconductor (CMOS) technology could dramatically improve the power consumption, gain, noise immunity and circuit design of these systems [14]. …”

Section: Introductionmentioning

confidence: 99%

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

et al. 2018

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In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge2Sb2Te5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm2/Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm2/Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials.

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“…However, this approach lacks the advantages of CMOS which enables low power consumption, high gain, superior noise immunity and simplified circuit design [5]. Recently, efforts have been undertaken to realize complementary technology with oxide semiconductors involving p-type carbon nanotubes [2,6,7] or p-type SnO [5]. GST is an alloy of Ge, Sb and Te belonging to the family of chalcogenide glasses.…”

Section: Introductionmentioning

confidence: 99%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Abstract-Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

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Flexible Complementary Oxide–Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors

Cited by 64 publications

References 22 publications

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

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