Flexible dv/dt and di/dt control method for insulated gate power switches

Park, Shihong; Jahns, T.M.

doi:10.1109/ias.2001.955592

Cited by 10 publications

(16 citation statements)

References 9 publications

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“…It is learned from (5) that if L E /R E =R f C f , it is possible to perform the estimation of the IGBT collector current i C by detecting the voltage of u Cf in the whole frequency range according to (6).…”

Section: B the Principle Of Collector Current Measurementmentioning

confidence: 99%

“…As a result, the range of safe operation of the power devices is limited. Active gate drive technology refers to using an active device to inject the required gate current into or to impose a particular gate voltage on the IGBT gate [4]- [6]. Thus, it is possible to achieve a better compromise between the switching loss and switching performance of an IGBT.…”

Section: Introductionmentioning

confidence: 99%

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Research of an On-Line Measurement Method for High-power IGBT Collector Current

Hu¹,

Sun²,

Zhao³

2016

Journal of Power Electronics

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The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u Ee ) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

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Section: B the Principle Of Collector Current Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research of an On-Line Measurement Method for High-power IGBT Collector Current

Hu¹,

Sun²,

Zhao³

2016

Journal of Power Electronics

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“…To optimize the switching behavior, many studies have been conducted during the last decade generally by using actively controlling the gate drives. Among the various published papers in literature, accurate control of the switching performance is achieved by using feedback control [3]- [7]. However, issues like the slow response speed, stability, and additional power consumption lead to complex design requirements for different IGBTs and various applications, which greatly limits their usage.…”

Section: Introductionmentioning

confidence: 99%

Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control

Chen

Chin

2020

IEEE J. Electron Devices Soc.

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Adding passive components in a conventional IGBT gate driver is a simple method to reduce transient current/voltage spikes during switching, but the extra devices and power loss make them less attractive. Alternatively, active gate drivers can improve the switching behavior, but are limited to specific devices and applications from the increased complexity of functions and feedback topology. This paper reports a simple design for a general purpose gate driver methodology to reduce the peak reverse recovery current and over-voltage. The proposed topology was verified using a foundry 0.25-μm BCD technology and experimental testing. Remarkable improvements of crucial current overshoot during turn-on, voltage overshoot during turn-off, and the associated switching loss are demonstrated using novel dual-phase turn-on and turn-off gate controls. Index Terms-active gate driver, insulated gate bipolar transistor (IGBT), reverse recovery current, switching loss, two-step driver.

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“…Owing to several advantages, at present the second class methods are preferred and studied by most engineers. A variety of flexible gate control strategies are proposed in [4][5][6][7][8][9][10][11][12] to mitigate the voltage overshoot and ring at the source. According to different instants the gate charge starts to be controlled, we begin to take control of the gate charge, also these methods can be divided into two categories.…”

Section: Introductionmentioning

confidence: 99%

“…According to different instants the gate charge starts to be controlled, we begin to take control of the gate charge, also these methods can be divided into two categories. The methods proposed by references [4][5][6][7][8][9][10] begin to slow down the discharge rate of the input capacitance since the Miller plateau. Although the method proposed by John et al [11] starts to control the discharge rate of the gate-drain capacitance, after the Miller plateau the drain current begins to fall.…”

Section: Introductionmentioning

confidence: 99%

Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

Wang

Sun

et al. 2013

IET Power Electronics

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Voltage overshoot and ring will occur during metal-oxide semiconductor field-effect transistor (MOSFET) turn-off, when it is embedded in circuits with inductive load and operates in pulse width modulation mode. The voltage overshoot and ring not only increase the system voltage stress, but also produce radiated and conducted electromagnetic interference. Based on the analysis of the influence of the gate voltage on the MOSFET turn-off behaviour, this study presents an active closedloop gate voltage control method to mitigate the voltage overshoot and ring. The proposed method senses the instant when the MOSFET drain current starts to fall by comparing the drain voltage with the bus voltage. Once the instant has been detected, a turn-off assistance voltage with proper amplitude and adjustable duration is generated and applied to the gate to mitigate the overshoot and ring. The delay of the gate control loop, including the delay of the comparator, can be compensated by proper choice of the components. Both simulations and experiments results indicate that the MOSFET turnoff voltage overshoot is largely reduced and the ring is almost completely eliminated. At the same time, the turn-off loss and EMI are also minimised.

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Flexible dv/dt and di/dt control method for insulated gate power switches

Cited by 10 publications

References 9 publications

Research of an On-Line Measurement Method for High-power IGBT Collector Current

Research of an On-Line Measurement Method for High-power IGBT Collector Current

Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control

Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

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