Flexible electric-double-layer thin film transistors based on a vertical InGaZnO<sub>4</sub> channel

Lei, Liuhui; Tan, Yuanyuan; Yuan, Xiong; Dou, Wei; Zhang, Jiale; Wang, Yongkang; Zeng, Sizhe; Deng, Shaozhi; Guo, Hongyan; Zhou, Weichang; Tang, Dongsheng

doi:10.1039/d1ra02155a

Cited by 1 publication

(2 citation statements)

References 16 publications

(14 reference statements)

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“…Several flexible materials have been explored as substrates ( Figure ) including PI, [ 41 ] Polyethylene Terephthalate (PET), [ 42 ] Polyethylene Naphthalate (PEN), [ 43 ] Thermoplastic Polyurethane (TPU), [ 44 ] cellulose paper, [ 45 ] Polyestersulfone (PES), [ 46 ] and Colorless Polyimide (CPI), [ 47 ] whereas their properties are exposed in Table 1. PI is a widely commercialized polymer and due to its attractive properties [ 44 ] and it is the most popular substrate for both TFTs and memristive applications, as noted in Tables S3 and S5 (Supporting Information).…”

Section: Flexible Substratesmentioning

confidence: 99%

“…In particular, vertical TFTs (VTFTs) can improve the bending capabilities due to higher resilience to in‐plane cracking of the active semiconductor. [ 1 ] Also, recent studies on VTFTs successfully demonstrated low operating voltages, as low as 0.1 V, and small SS (≈80 mV dec −1 ) [ 45 ] that is ideal for low‐power and portable electronics.…”

Section: Flexible Electronic Devicesmentioning

confidence: 99%

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Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Panca

Panidi

Faber

et al. 2023

Adv Funct Materials

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Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal‐oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non‐rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all‐metal‐oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum‐ or solution‐based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.

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