Flexible graphene–PZT ferroelectric nonvolatile memory

Abstract

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Roll‐to‐Roll (R2R) Production of Ultrasensitive, Flexible, and Transparent Pressure Sensors Based on Vertically Aligned Lead Zirconate Titanate and Graphene Nanoplatelets

“…Hussain and co‐workers reported a high performance and a low‐cost batch fabrication process for PZT‐silicon–based flexible ferroelectric capacitors that can be used for nonvolatile memory applications . Several other similar studies, including flexible graphene‐PZT–based ferroelectric systems, also reveal the importance of ferroelectric materials for memory applications …”

Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory

“…Table 1 summarizes the basic properties of the flexible system in this study and several reported flexible ferroelectric memory elements. [27,28,[37][38][39][40] Note that the bendable PZT film was directly grown on mica via a simple and cost-effective CSD method using the spin coating technique in this work, and the ferroelectric (P r ≈ 30 μC cm −2 ) and dielectric response Adv. Electron.…”

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

“…However, PZT-based flexible FeRAM was not achievable on organic platforms because of PZT's high crystallization temperature (>600 °C), well above the melting temperature of most polymeric organic substrates. Hence, PZT FeRAMs have been demonstrated only on flexible silicon and platinum foil [229,230] or built on silicon and then transferred to polymeric flexible substrates [84,231]. Nevertheless, the highest level of mechanical durability (20,000 bending cycles) has been reported for hybrid FeRAMs with inorganic devices transferred to a polymeric substrate [232,233].…”

“…As of today variety of materials have been used to build NVM devices. For example, NMVs based on; (i) embedded 0-dimensional gold nanoparticles (NPs) [73][74][75][76][77], black phosphorous quantum dots (QDs) [78], and silicon QDs [79]; (ii) 1-dimensional zinc oxide (ZnO) nanowires [48], silicon (Si) nanowires [80], and carbon nanotubes (CNTs) [81][82][83]; and (iii) 2-dimensional graphene [49,84,85], graphene oxide [46,[86][87][88][89][90][91], molybdenum disulfide (MoS2) [50,92], zinc oxide (ZnO) [48], and hydrated tungsten tri-oxide (WO3.H2O) nano-sheet [29] have already been reported.…”