Flexible Organic Circuits with Printed Gate Electrodes

Zschieschang, Ute; Klauk, Hagen; Halik, Marcus; Schmid, Günter; Dehm, C.

doi:10.1002/adma.200305012

Cited by 170 publications

(105 citation statements)

References 40 publications

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“…Printing techniques promise fast and easy fabrication. 6,7 Recently improved dielectrics have enabled low-voltage organic devices. 8 Someya and Sakurai demonstrated an artificial skin based on organic TFTs and rubbery pressure sensors.…”

Section: Introductionmentioning

confidence: 99%

Mechanical force sensors using organic thin-film transistors

Darlinski

Böttger

Waser

et al. 2005

Journal of Applied Physics

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The pressure dependence of pentacene ͑C 22 H 14 ͒ transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect.

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Section: Introductionmentioning

confidence: 99%

Mechanical force sensors using organic thin-film transistors

Darlinski

Böttger

Waser

et al. 2005

Journal of Applied Physics

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“…For comparison, the compounds tetrathiafulvalene (TTF), ferrocene (Fc) and 5, 10, 15, 20-tetra-phenyl-21H, 23H-porphine nickel (II) (NiTPP) were chosen as donors, while poly (ethylene oxide) (PEO), PS, polycarbonate (PC), and PMMA were used as the blend matrix (Figure 6(a) and (b)). These devices exhibited steep hysteresis loops with an on/off memory ratio of up to 2×10 4 , and a retention time greater than 24 h. A low operational voltage is essential for practical applications. To achieve a low operating voltage, OFET devices were fabricated containing polymer dielectrics (cross-linked PMMA, with 1,6-bis(trichlorosilyl)hexane as a Figure 6 Chemical structures of (a) donor molecules and (b) polymers for blended organic memory transistors; (c) typical transfer characteristics of memory devices containing a cross-linked polymer as the dielectric; (d) transfer characteristics of a control device lacking a donor/polymer blend buffer layer [29].…”

Section: Polymer Electret Ofet Memorymentioning

confidence: 99%

“…In 2005, Naber et al fabricated ferroelectric OFET memory devices containing the ferroelectric copolymer poly(vinylidene fluoride/ trifluoro-ethylene) (P(VDF/TrFE)) as a gate insulator and poly[2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene-vinylene] as a semiconductor [34,35]. The devices had an on/off ratio of 10 4 , with a programming time of 0.3 ms and a memory stability of more than 1 week. Most of the recent ferroelectric OFET memories have used MXD6 or (P(VDF/TrFE)) as ferroelectric dielectrics [36][37][38][39][40][41][42][43][44][45].…”

Section: Ferroelectric Ofet Memorymentioning

confidence: 99%

“…Organic electronics have been the subject of intense research during the last two decades because of their remarkable advantages such as the realization of low fabrication cost, large area, flexible devices that are not feasible to produce using standard inorganic electronics [1][2][3][4]. Organic devices such as organic filed effect transistors (OFETs) [5][6][7], organic light emitting diodes (OLEDs) [8], organic photovoltaic cells [9], chemical and photo sensors [10,11], are potential candidates for future flexible electronic-device applications.…”

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confidence: 99%

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Nonvolatile memory devices based on organic field-effect transistors

Wang

Peng

et al. 2011

Chin. Sci. Bull.

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Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed. for realization of organic memory because of its nondestructive read-out, complementary integrated circuit architectural compatibility, and single transistor realization [19]. Recently, Sekitani et al. fabricated nonvolatile memory arrays containing 676 organic floating-gate transistors arranged in a 26×26 grid on a plastic film with a thickness of 125 μm that can withstand more than 1000 program/erase cycles [20]. Guo et al. reported OFET multibit storage devices based on pentacene or copper phthalocyaine (CuPc), which were fabricated using polystyrene (PS) or polymethylmethacrylate (PMMA) modified SiO 2 as dielectric layer through light-assisted programs [21]. The devices showed excellent multibit storage ability and the retention times were more than 250 h. Both of these were examples significantly progress the research of OFET memory. Although the performance of OFET memory is still not comparable with that of other types of organic memories or silicon counterparts, they show tremendous potential for future applications. In this feature article, we review the recent progress in classes of OFET-based memory including floating gate, polymer electret, ferroelectric and several other types of OFET memories with unique configurations.

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“…Table 1 provides examples of values reported during the last 12 years for a range of technologies and materials. [ 4,5,[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] From this list, only six reports [ 18,22,[26][27][28]31 ] appear to meet the above benchmark and in two of these cases [ 18,22 ] the high frequency/short stage delay criterion was only achieved with supply voltages ≥50 V.…”

Section: Introductionmentioning

confidence: 99%

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

Watson

Brown

Carter

et al. 2016

Adv Elect Materials

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the manufacturing processes divide naturally into two general approaches i.e., solution-processing and vacuum processing. In the former approach some or all transistor and circuit elements are deposited from solution and holds out the promise of low-cost, high-volume roll-to-roll (R2R) manufacture of circuits using, for example, inkjet [ 7 ] or gravure printing. [ 8 ] On the other hand, processes requiring vacuum evaporation of one or more component, or photolithography and dry-etching are more suited to batch-processing.Progress has been, and continues to be made, in applying mass-printing R2R processes [ 9 ] with a range of logic circuits being demonstrated [ 10 ] albeit based on singlewalled carbon nanotubes as the active material. High-speed metal patterning and barrier layer deposition are commercially used processes. R2R circuit fabrication based entirely on vacuum evaporation is, therefore, feasible. [ 11 ] For example, saturated-load unipolar ring oscillators (ROs) were produced in a R2R-compatible environment. [ 12 ] Although a stage delay of 46 µs was achieved at a high supply voltage, circuit performance was compromised by a nonoptimal design purposely limited to the resolution and registration capability of a high-speed metal printing process. Nevertheless, the stage delay achieved was much shorter than previously reported for ROs produced using all-solution mass-printing processes ( Table 1 ) . [13][14][15] This refl ects the generally higher mobilities of vacuum-evaporated small-molecules [ 12 ] compared with solutionprocessed small-molecules. [ 16,17 ] Other performance-degrading features of solution R2R-processes include a relatively thick dielectric layer and relatively poor resolution. The former leads to high operating voltages. The latter reduces operating speed by restricting the source-drain gap, i.e., the channel length, L , of the OTFTs to a minimum of about 30-40 µm. Achieving a resolution below ≈10 µm to improve device speed poses a signifi cant near-term challenge for mass-printing processes. Relatively poor registration between different patterned layers is a further problem leading to undesirable parasitic effects. [ 12 ] It is not surprising, therefore, that the signifi cant improvements in organic circuit performances have been demonstrated using the higher resolution approaches derived from silicon technology. At the most basic level, this is confi ned to patterning source-drain electrodes by photolithography to achieve channel lengths of 5 µm High-frequency ring oscillators with sub-microsecond stage delay fabricated from spin-coated fi lms of a specially formulated small-molecule/host-polymer blend are reported. Contacts and interconnects are patterned by photolithography with plasma etching used for creating vias and removing excess material to reduce parasitic effects. The characteristics of transistors with 4.6 µm channel length scale linearly with channel width over the range 60-2160 µm. Model device parameters extracted using Silvaco's Universal Organic Thin Film Transistor...

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Flexible Organic Circuits with Printed Gate Electrodes

Cited by 170 publications

References 40 publications

Mechanical force sensors using organic thin-film transistors

Mechanical force sensors using organic thin-film transistors

Nonvolatile memory devices based on organic field-effect transistors

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

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