Flexible organic transistors based on a solution-sheared PVDF insulator

Abstract

Organic field-effect transistors are demonstrated in which the insulator-semiconductor stack of the poly(vinylidene fluoride) (PVDF) and polystyrene (PS):dibenzo-tetrathiavulfalene (DB-TTF) blend is deposited by two low-cost and scalable solution shearing steps onto plastic substrates. The PS vertically phase separates upon coating the DB-TTF:PS blend solution and acts as a smoothening and depolarisation layer for the underlying PVDF. The transistors exhibit a mean mobility of 0.2 cm 2 V À1 s À1 , an on/off ratio of 10 4 and near-zero threshold voltage with high reproducibility, the same performance as on previously reported Si/SiO 2 substrates.Fig. 4 (a) Forward and reverse transfer characteristic of an OFET with L = 50 mm, W = 4 mm, V D = À40 V. (b) Output characteristic for V G 0 to À40 V in steps of À5 V. (c) Peak saturation mobility and (d) threshold voltage spread from 69 OFETs on 3 different substrates.

A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

“…Recently, we reported a solution‐shearing technique, namely bar‐assisted meniscus shearing (BAMS), of an organic semiconductor blend based on the small semiconducting molecule dibenzo‐tetrathiafulvalene (DB‐TTF) and the insulating polymer polystyrene (PS). This technique resulted in highly crystalline thin films that showed ideal OFET characteristics . The question raised at this point was if the BAMS technique could be extended to other organic semiconductors.…”

High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation

“…The use of blends of organic semiconductors with PS have been shown to promote material processability and also leads to thin films with an enhanced crystallinity and environmental stability242526. Further, BAMS is a low cost technique compatible with roll-to-roll processes and with flexible substrates for large-area fabrication27. This technique has recently been demonstrated to produce high-crystalline thin films in one single step featuring electrical performances comparable to devices based on amorphous silicon242527.…”

“…Further, BAMS is a low cost technique compatible with roll-to-roll processes and with flexible substrates for large-area fabrication27. This technique has recently been demonstrated to produce high-crystalline thin films in one single step featuring electrical performances comparable to devices based on amorphous silicon242527.…”

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

“…Further, by tuning the deposition parameters, such as temperature, speed or solution, it is possible to modulate the thin-film morphology. [28] This method has proven to be useful to deposit uniform and reproducible crystalline semiconducting thin-films giving high-performance devices on inorganic Si/SiOx substrates [29] as well as on flexible plastic ones [30], in particular when the semiconductor was blended with insulating polymers.…”