2024
DOI: 10.1038/s41467-024-45092-7
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Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Dong Yang,
Xiao-Lei Shi,
Meng Li
et al.

Abstract: Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi2Te3. This study highlights the potential of Ag2Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag2Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00l)-orientation a… Show more

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Cited by 67 publications
(9 citation statements)
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“…As a comparison, the formation of Ni 1– x Se was observed at the Ag 2 Se/Ni interface and FeSe was observed at the Ag 2 Se/Fe interface, while Cu diffused severely into Ag 2 Se (Figures S16 and S17 of the Supporting Information). The electrical contact resistance ( R c ) of Ag/Ag 2 Se is estimated to be ∼0.3 mΩ (Figure b), corresponding to an interfacial contact resistivity (ρ c ) of only ∼11 μΩ cm 2 , which is comparable to the lowest ever reported in Ag 2 Se-based devices and is sufficiently low compared to results reported in devices ,,, using other thermoelectric materials (Figure c). As a result of the interphases formed, the ρ c values of Ni/Ag 2 Se and Fe/Ag 2 Se are ∼21 and ∼27 μΩ cm 2 , respectively, higher than that of Ag/Ag 2 Se.…”
Section: Resultsmentioning
confidence: 57%
“…As a comparison, the formation of Ni 1– x Se was observed at the Ag 2 Se/Ni interface and FeSe was observed at the Ag 2 Se/Fe interface, while Cu diffused severely into Ag 2 Se (Figures S16 and S17 of the Supporting Information). The electrical contact resistance ( R c ) of Ag/Ag 2 Se is estimated to be ∼0.3 mΩ (Figure b), corresponding to an interfacial contact resistivity (ρ c ) of only ∼11 μΩ cm 2 , which is comparable to the lowest ever reported in Ag 2 Se-based devices and is sufficiently low compared to results reported in devices ,,, using other thermoelectric materials (Figure c). As a result of the interphases formed, the ρ c values of Ni/Ag 2 Se and Fe/Ag 2 Se are ∼21 and ∼27 μΩ cm 2 , respectively, higher than that of Ag/Ag 2 Se.…”
Section: Resultsmentioning
confidence: 57%
“…Therefore, depositing inorganic materials on flexible substrates is another way of achieving flexible thermoelectric thin films. Among inorganic thermoelectric thin films, Bi 2 Te 3 13 , 14 , as well as silver chalcogenides such as Ag 2 Se 15 , 16 , have exhibited excellent near-room-temperature ZT values ( ZT > 1 at 400 K). However, the reported inorganic flexible thermoelectric thin films are currently limited to functionalities near room temperature 10 .…”
Section: Introductionmentioning
confidence: 99%
“…However, the inherent crystal structure of Bi 2 Te 3 imparts poor flexibility and the relatively low natural abundance of tellurium (Te) contributes to cost inefficiency. Consequently, there is a pressing need for the development of alternative inorganic thermoelectric thin films that can overcome the flexibility limitations and the cost concerns associated with Bi 2 Te 3 -based materials [ 4 ].…”
Section: Introductionmentioning
confidence: 99%