Flexible shielding layers for solar cells in space applications

Feenstra, Jon; Leest, R. H. van; Smeenk, N. J.; Oomen, G.; Bongers, E.; Mulder, P.; Vlieg, Elias; Schermer, J.J.

doi:10.1002/app.43661

Cited by 26 publications

(22 citation statements)

References 40 publications

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“…The replacement of the expensive growth substrate with a flexible carrier can reduce the weight by approximately 25% on cell level. Additional weight reduction can be accomplished by replacing the rigid cover glass with a flexible coating 10,11 and implementing a new lightweight support to replace the currently used rigid aluminium honeycomb support. In theory this allows for a total weight reduction of more than 75% 11 .…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Leest¹,

Kleijne²,

Bauhuis³

et al. 2016

Phys. Chem. Chem. Phys.

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Substrate-based GaAs solar cells having a dense Au/Cu front contact grid with 45% surface coverage were exposed to accelerated life testing at temperatures between 200 and 300 • C. TEM analysis of the front contacts was used to gain a better understanding of the degradation process. During accelerated life testing at 200 • C only intermixing of the Au and Cu in the front contact occurs, without any significant influence on the J-V curve of the cells, even after 1320h (55 days) of accelerated life testing. At temperatures ≥ 250 • C a recrystallization process occurs in which the metals of the contact and the GaAs front contact layer interact. Once the grainy recrystallized layer starts to approach the window, diffusion via grain boundaries to the window and into the active region of the solar cells occurs, causing a decrease in V oc due to enhanced non-radiative recombination via Cu trap levels introduced in the active region of the solar cell. To be a valid simulation of space conditions the accelerated life testing temperature should be < 250 • C in future experiments, in order to avoid recrystallization of the metals with the GaAs contact layer.

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Section: Introductionmentioning

confidence: 99%

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Leest¹,

Kleijne²,

Bauhuis³

et al. 2016

Phys. Chem. Chem. Phys.

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“…These characteristics make ELO III-V solar cells excellent candidates for implementation in solar panels for space applications [7]. Due to the additional flexibility new light-weight panel designs become available [8] and the launch costs would be reduced due to the lower weight. The ELO process allows for re-use of the expensive GaAs or Ge substrates [3,9], which would reduce the cost of the cells themselves as well.…”

Section: Introductionmentioning

confidence: 99%

“…The main potential disadvantage of our current thin-film ELO Gallium Arsenide solar cell design, is that it includes a copper handling and support foil [8]. Copper is notoriously known as a fast diffuser in many semiconductors, including GaAs.…”

Section: Introductionmentioning

confidence: 99%

Effects of copper diffusion in gallium arsenide solar cells for space applications

Leest¹,

Bauhuis²,

Mulder³

et al. 2015

Solar Energy Materials and Solar Cells

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High efficiency, thin-film Epitaxial Lift-Off (ELO) III-V solar cells offer excellent characteristics for implementation in flexible solar panels for space applications. However, the current thin-film ELO solar cell design generally includes a copper handling and support foil. Copper diffusion has a potentially detrimental effect on the device performance and the challenging environment provided by space (high temperatures, electron and proton irradiation) might induce diffusion. It is shown that heat treatments induce copper diffusion. The open-circuit voltage (V oc ) is the most affected solar cell parameter. The decrease in V oc can be explained by enhanced non-radiative recombination via Cu trap levels in the middle of the band gap. The decrease in V oc is found to be dependent on junction depth. In all Cu cells annealed at T ≥ 300 ○ C signs of Cu diffusion are present, which implies that a barrier layer inhibiting Cu diffusion is necessary. Electron radiation damage was found to have no influence on Cu diffusion.

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“…The released active cell structures have the intrinsic potential to be turned into genuine thin-film devices if they are transferred to a thin and flexible carrier. Such thin-film III-V devices offer excellent characteristics for implementation in next generation space solar panels, as they allow for a significant weight reduction on panel level [14], while at the same time offering the highest possible solar cell efficiencies [3], [15], [16]. Space, however, also provides a harsh environment (vacuum, harsh UV, electron and proton radiation, temperature cycling) which adds additional design challenges.…”

Section: Introductionmentioning

confidence: 99%

“…Unfortunately reports of space environmental testing of thin-film III-V solar cells are scarce [17]- [20] and a number of design challenges remain to be addressed. These include the need for thin-film interconnection techniques, suitable radiation and UV resistant flexible cover glasses [14], [21] and in particular a space compatible flexible carrier and support.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

Leest

Mulder

Gruginskie

et al. 2017

IEEE J. Photovoltaics

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Abstract-High efficiency, thin-film III-V solar cells offer excellent characteristics for implementation in flexible solar panels for space applications. In order to investigate the space compatibility of such cells. The temperature-induced degradation of both substrate-based cells with Au and Au/Cu contacts and thin-film cells on Au and Cu carriers was studied by accelerated ageing testing (AAT) at 200 ○ C. With less than 3% decrease in efficiency after 37 days at 200 ○ C (equivalent to 10 years at 100 ○ C for Ea = 0.70 eV) the substrate-based cells show excellent results. With a 10% decrease in efficiency after 37 days of AAT the thin-film cells on an Au carrier exhibit promising results, given the early stage of development of the thin-film cells. On the other hand severe degradation is observed for thin-film cells on a Cu carrier (decrease in efficiency > 60% after 37 days of AAT). At least two factors contribute to this severe degradation: thermally-induced stress and Cu diffusion.

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Flexible shielding layers for solar cells in space applications

Cited by 26 publications

References 40 publications

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Effects of copper diffusion in gallium arsenide solar cells for space applications

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

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