Flexible strategy of epitaxial oxide thin films

Huang, Jijie; Chen, Weijin

doi:10.1016/j.isci.2022.105041

Cited by 10 publications

(2 citation statements)

References 138 publications

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“…In recent years, the growing need for intelligent medical devices has sparked significant interest in flexible electronic devices because of their high flexibility. , Among various functional materials, ferroelectric materials are considered potential candidates for future memory devices due to their high speed, low power consumption, and nonvolatile characteristics. − Based on the polarization characteristics of ferroelectric materials, a variety of ferroelectric devices have been developed, including ferroelectric memory, ferroelectric field-effect transistors, and ferroelectric tunneling junction devices. − Ferroelectric materials with a high dielectric constant have been utilized in the current mainstream fin field-effect transistor (FinFET) …”

Section: Introductionmentioning

confidence: 99%

A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

Liu,

Wei,

Zhang

et al. 2024

ACS Appl. Electron. Mater.

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The rapid development of flexible electronics industrialization has imposed more demanding requirements on flexible wearable devices. However, traditional memory storage on rigid substrates is no longer compatible with flexible substrates. The high polarization value of conventional chalcogenide ferroelectric films poses a problem, as it necessitates high film thickness, which hinders the development of device densification. At the same time, a flexible film achieved through etching sacrificial layers is no longer suitable for industrial production. In this study, we present a high quality and high polarization flexible 10 nm Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric film grown on mica substrate by employing the atomic layer deposition (ALD) technique. The flexible HZO ferroelectric films exhibited an average roughness at the atomic level, R a ∼ 0.931 nm. The structural properties of flexible HZO ferroelectric films were investigated. The results demonstrated a ferroelectric phase with a crystallographic spacing of 0.296 nm (111). The ferroelectricity of the flexible HZO ferroelectric films was investigated, demonstrating commendable polarization values: 2P r ∼ 62.88 μC/cm 2 and 2P s ∼ 82.20 μC/cm 2 . A good ferroelectricity even under 9 mm of bending was exhibited for flexible HZO ferroelectric films. Our work introduces a new method for achieving ultrathin, flexible, nonvolatile memory.

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Section: Introductionmentioning

confidence: 99%

A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

Liu,

Wei,

Zhang

et al. 2024

ACS Appl. Electron. Mater.

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“…Such free-standing films are transferred onto polymer substrates to endow the film with flexibility [14][15][16]. Of the two methods, the direct growth on flexible substrates has frequently been adopted due to the advantages of its one-step growth capability and large-scale processing [17]. For example, Kingon et al used a copper (Cu) foil substrate for sol-gel-grown Pb(Zr,Ti)O 3 (PZT) films with flexible functionality [18].…”

Section: Introductionmentioning

confidence: 99%

Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

Choi,

Ahn,

Hong

et al. 2023

Crystals

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The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In this study, we report the optimization of an oxide-based LaNiO3 (LNO) electrode for high-quality Pb(Zr0.52Ti0.48)O3 (PZT) thick films. The surface morphology and electrical conductivity of sol-gel-grown LNO films on a fluorophlogopite mica (F-mica) substrate were optimized at a crystallization temperature of 800 °C and a film thickness of 120 nm. Our approach represents the promising potential pairing between PZT and LNO electrodes. While LNO-coated F-mica maintains stable electrical conductivity during 1.0%-strain and 104-bending cycles, the upper PZT films exhibit a nearly square-like polarization–electric field behavior under those stress conditions. After 104 cycles at 0.5% strain, the remnant polarization shows decreases as small as ~14%. Under flat (bent) conditions, the value decreases to just 81% (49%) after 1010 fatigue cycles and to 96% (85%) after 105 s of a retention test, respectively.

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Substrate‐Free Inorganic‐Based Films for Thermoelectric Applications

Liang,

Shu,

et al. 2024

Advanced Materials

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The development of highly integrated electronic components and the Internet of Things demands efficient thermal management and uninterrupted energy harvesting, which provides exciting opportunities for thermoelectric (TE) technology since it allows direct conversion between electricity and thermal energy. The improved output performance of TE devices has traditionally been driven by advancements in inorganic materials. Recently, there has been growing interest in studying substrate‐free inorganic‐based TE thin films because they provide improved adherence to curved surfaces and offer a more compact size compared to the corresponding rigid form of these materials. This review begins by summarizing various methods for fabricating freestanding inorganic‐based TE films, including leveraging the intrinsic plasticity of certain materials, exfoliating layered‐structure materials, using sacrificial substrates, and creating composites with flexible components such as polymers and carbon‐based materials. A key challenge in achieving high device performance is determining how to maintain the favorable TE properties of inorganic materials. This can be addressed through strategies such as high inorganic content loading, multicomponent engineering, and interfacial structure design. The review also discusses the applications of substrate‐free inorganic‐based TE devices in both power generation and solid‐state cooling. Finally, it outlines current challenges and proposes potential research directions to further advance the field.

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Flexible strategy of epitaxial oxide thin films

Cited by 10 publications

References 138 publications

A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

Substrate‐Free Inorganic‐Based Films for Thermoelectric Applications

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Flexible strategy of epitaxial oxide thin films

Cited by 10 publications

References 138 publications

A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate

A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate

Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

Substrate‐Free Inorganic‐Based Films for Thermoelectric Applications

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Product

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A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate