Flexible Transparent Conductive Electrodes: Unveiling Growth Mechanisms, Material Dimensions, Fabrication Methods, and Design Strategies

Abstract

Flexible transparent conductive electrodes (FTCEs) constitute an indispensable component in state‐of‐the‐art electronic devices, such as wearable flexible sensors, flexible displays, artificial skin, and biomedical devices, etc. This review paper offers a comprehensive overview of the fabrication techniques, growth modes, material dimensions, design, and their impacts on FTCEs fabrication. The growth modes, such as the “Stranski–Krastanov growth,” “Frank–van der Merwe growth,” and “Volmer–Weber growth” modes provide flexibility in fabricating FTCEs. Application of different materials including 0D, 1D, 2D, polymer composites, conductive oxides, and hybrid materials in FTCE fabrication, emphasizing their suitability in flexible devices are discussed. This review also delves into the design strategies of FTCEs, including microgrids, nanotroughs, nanomesh, nanowires network, and “kirigami”‐inspired patterns, etc. The pros and cons associated with these materials and designs are also addressed appropriately. Considerations such as trade‐offs between electrical conductivity and optical transparency or “figure of merit (FoM),” “strain engineering,” “work function,” and “haze” are also discussed briefly. Finally, this review outlines the challenges and opportunities in the current and future development of FTCEs for flexible electronics, including the improved trade‐offs between optoelectronic parameters, novel materials development, mechanical stability, reproducibility, scalability, and durability enhancement, safety, biocompatibility, etc.

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

“…* Authors to whom any correspondence should be addressed. special functional window coatings and flexible electronic devices [1,2] owing to their exceptional properties such as high conductivity, excellent visible range transparency, high infrared reflectivity and semiconductor characteristics [3,4]. TCO primarily encompasses oxides of Sn, In, Cd and Zn, along with their doped counterparts [5].…”