Flexible Transparent InGaZnO Thin-Film Transistors on Muscovite Mica

Huo, Wenxing; Sui, Yanxin; Han, Z.; Wang, Tao; Liang, Huili; Du, Xiaolong

doi:10.1109/ted.2019.2902346

Cited by 14 publications

(14 citation statements)

References 34 publications

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“…1) Transparent and flexible IGZO TFTs were successfully fabricated on a 15 μm mica substrate, which was compatible with four-step photolithographic processes and high-temperature processes. [34] The device performance and stabilities were improved after nitrogen annealing at both 400 and 300 C due to the reduction of traps in the Al 2 O 3 gate dielectric, the IGZO channel, and the interface between them. [26] The electrical performance was also stable under bending radii from 14 to 10 mm, as shown in Figure 9.…”

Section: Thin Substratementioning

confidence: 99%

“…In addition, some researchers chose muscovite mica (melting point: 700-1100 C) as the flexible substrate, which could endure a 400 C annealing process, to demonstrate more stable electrical and mechanical performance of the devices. [34] However, incompatibility with large-area production limits its applications. Polydimethylsiloxane (PDMS) could also be used as a flexible substrate due to its stretchability and biocompatibility, but is difficult to process by standard fabrication techniques.…”

Section: Structurementioning

confidence: 99%

“…The ALD Al 2 O 3 was also adopted as a gate dielectric in other researches. [19,20,34,62,[73][74][75][76] Because the ALD process suffers from a low growth rate and small substrate size, ultrathin Al x O y prepared by a nonvacuum solution process was utilized as the gate dielectric in flexible IGZO TFTs. [77] In detail, a 3 nm Al x O y was deposited using anodization, which is a cost-efficient technique for room-temperature, large-area fabrication of capacitors.…”

Section: Adoption Of High-κ Materialsmentioning

confidence: 99%

“…Also, repetitive bending stress under compressive and tensile strains has also been reported. [34,97,98] Table 3 shows the mechanical flexibility of IGZO TFTs in the last 10 years. The methods for improving their mechanical bending stability are listed subsequently.…”

Section: Mechanical Flexibilitymentioning

confidence: 99%

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Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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Section: Thin Substratementioning

confidence: 99%

Section: Structurementioning

confidence: 99%

Section: Adoption Of High-κ Materialsmentioning

confidence: 99%

Section: Mechanical Flexibilitymentioning

confidence: 99%

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Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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“…InGaZnO (IGZO) has been widely used in display and flexible electronics thanks to the advantages of high mobility, uniformity, transparency, and low-temperature processing [34][35][36][37][38][39][40]. In particular, IGZO devices have been recently studied in applications such as wearable healthcare and biosensor, where energy-efficient and flexible logic and memory technologies are needed to process a huge amount of bio-electrical information [41][42][43].…”

Section: Introductionmentioning

confidence: 99%

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

et al. 2020

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In this study, we demonstrate both of digital and analog memory operations in InGaZnO (IGZO) memristor devices by controlling the electrode materials for neuromorphic application. The switching properties of the devices are determined by the initial energy barrier characteristics between the metal electrodes and the IGZO switching layer. Digital switching characteristics are obtained after the forming process when Schottky junction occurs at both of top and bottom electrodes. On the other hands, analog resistive switching is achieved when Schottky and Ohmic junctions exist at each side because the applied voltage modulates the Schottky barrier height through the Ohmic contact. In addition, the weightupdate properties of the devices are verified depending on identical and incremental pulse schemes. The incremental pulse trains improve the linearity and variation of weight modulation, leading to the stable learning characteristics of neuromorphic system in terms of pattern recognition with MNIST handwritten digit images.

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Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Panca

Panidi

Faber

et al. 2023

Adv Funct Materials

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Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal‐oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non‐rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all‐metal‐oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum‐ or solution‐based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.

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Flexible Transparent InGaZnO Thin-Film Transistors on Muscovite Mica

Cited by 14 publications

References 34 publications

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

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