Flexible ultra-short channel organic ferroelectric non-volatile memory transistors

Li, Enlong; Wu, Xiaomin; Lan, Shuqiong; Yang, Qian; Fang, Yuan; Chen, Huipeng; Guo, Tailiang

doi:10.1039/c8tc04892d

Cited by 54 publications

(37 citation statements)

References 38 publications

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“…Under a negative gate voltage of −6 V, the polarization of PZT is reversed downward, resulting in depletion of channel charges at PZT/ZnO interface and thus low current. The memory window is around 1.5 V when V GS sweeps from −6 to +6 V, consistent with coercive voltage estimated from P‐E loop, suggesting that the flexible FeFETs can operate as well as be programmed with a low voltage, much smaller than other FeFETs using polymeric ferroelectric gate that is usually in the range from ±20 to ±40 V, though lower coercive voltage of 4 V has also been demonstrated in ultrathin P(VDF‐TrFE‐CTFE), at the expense of low on/off ratio. The device also possesses good retention characteristics critical for memory application as shown in Figure b, acquired by measuring the on/off current as a function of time after applying a writing/erasing pulse of ± 6 V to the gate electrode at a fixed drain voltage of 0.5 V. Note that between readout measurements, all the terminals of FeFET are left floating for retention characterization, reflecting nonvolatile nature of the device.…”

Section: Resultssupporting

confidence: 79%

“…One particular system of extensive interests is flexible ferroelectric field effect transistors (FeFETs), which are capable of both low power sensing and nonvolatile data storage that are attractive for smart wearable devices, and the ability to continuously tune and program their multiple conduction states makes them promising for emerging memristor applications as well, e.g., as artificial synapses in neuromorphic computing . To ensure mechanical flexibility, ferroelectric polymers such as poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)] is the material of choice for ferroelectric gate in flexible FeFETs, and a number of organic semiconducting channel materials such as pentacene and polymeric substrates such as polyethylene‐naphthalate (PEN) have been explored as well. These earlier studies have demonstrated great potential of flexible FeFETs, yet the performance of the state‐of‐art flexible FeFETs is not nearly comparable to their rigid counterparts based on inorganic ferroelectrics such as Pb(Zr 0.2 Ti 0.8 )O 3 .…”

Section: Introductionmentioning

confidence: 99%

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Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Ren

Zhong

Xiao

et al. 2019

Adv Funct Materials

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Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state-of-art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all-inorganic flexible FeFET based on epitaxial Pb(Zr 0.1 Ti 0.9 )O 3 /ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10 4 as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment.

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Section: Resultssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Ren

Zhong

Xiao

et al. 2019

Adv Funct Materials

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“…Materials : Poly[2,5‐bis(alkyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐alt‐5,5′‐di(thiophen‐2‐yl)‐2,2′‐(E)‐2‐(2‐(thiophen‐2‐yl)vinyl)‐thiophene](PDVT‐8) ( M w = 50K, PDI = 2.4) was purchased from 1‐Materials . PDVT‐8 was dissolved in chloroform at 55 °C for 2 h with a concentration of 10 mg mL −1 .…”

Section: Methodsmentioning

confidence: 99%

High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design

Yang

Liu

et al. 2019

Adv Elect Materials

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floating gate organic field effect transistors (OFET)-based memory has been considered to have the most application prospects. [1][2][3][4][5][6] These memories based on the electric programming and erasing have been extensively studied while further development of their practical application is restricted by the high programming/ erasing voltages, which motivates the introduce of the light programming as an exactly novel independent programming method. [7][8][9][10][11] The light programming offers a noncontact programming method and is orthogonal to the electrical read-out process, which provides efficient way to achieve higher accuracy and capacity (multilevel storage) with the high discrepancies between different storage levels. [1] However, organic phototransistor memory (OPTM) currently showed unsatisfying performance such as small memory window and short retention time compared with memories with electric programming and erasing. Moreover, in order to generate sufficient photo-induced charge carriers and subsequent trapped minority charges for large memory window, sufficient photon energy, light intensity (3.5−188 mW cm −2 ), and illumination time (1 s to continuously) was required, which also seriously hindered further development and application of photonic memory. [1,12,13] The basic working mechanism of photonic memories is that the photo-induced charge carriers are trapped into or detrapped from the charge trapping layer across the interface between the active layer and trapping layer during the programming/erasing process, [9] resulting in a shift of threshold voltage during the reading process. Therefore, the performance of OPTM significantly depends upon the non-volatile bistability of the charge-trapping layer and the charge transfer process during the charge-trapping and reading process. [14] However, majority researches of light programming memory currently focused on the design of the charge-trapping layer to increase number of discrete charge-trapping sites such as metallic or semiconducting nanoparticles to improve the memory performance. [15][16][17][18] Little attention has been given to two key factors, "trapped carriers effect" and "interface effect" which were related to the charge transfer process and notably impacted the A novel organic phototransistor memory (OPTM) with architecture design is fabricated with all-inorganic perovskite quantum dots (QDs) as charge trapping layer. The novel architecture enables ultrashort channel length and vertical the charge transfer to effectively suppress both trapped carriers effect and interface effect, two key factors which impact photonic memory performance. Additionally, perovskite QDs are introduced to function as both the charge trapping layer and a UV-light-responsive material that emits visible light that can be subsequently absorbed by the active layer, leading to efficient utilization of UV light to generate trapped charges. OPTM exhibits excellent memory properties under significantly improved light conditions, which is superior to previou...

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“…Compared with inorganic counterparts, organic molecules have advantages such as light weight, low cost, large‐scale yields, compatibility with flexible substrates, and tailorable optoelectronic properties by synthetic methods . The organic π‐conjugated small molecules and polymers have shown great potential to implement large‐area, low‐cost and flexible optoelectronic devices . On the one hand, various solution‐processed methods (e. g., drop‐casting, spin‐coating and inkjet printing) have been adopted to simplify the fabrication of devices due to the good solubility of organic materials .…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

Huang

Fuchs

et al. 2019

ChemPhotoChem

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Phototransistors combine light detection and signal amplification functions into a single device and are regarded as one of the most important components for optoelectronic integration. In recent years, organic phototransistors (OPTs) have attracted worldwide interest because of their potential advantages of low cost, light weight, excellent flexibility and broadband detection. In this review, a brief description of the working mechanisms and performance metrics of OPTs is presented. Afterwards, the recent progress of OPTs based on the conventional planar fieldeffect transistor structure is presented. Furthermore, from the perspective of novel device architectures and interface engineering, strategies for improving the performance of OPTs are discussed. Flexible optoelectronic devices based on OPTs for potential application in next-generation wearable and humanfriendly electronics are also highlighted. Finally, an outlook for future research directions and challenges for OPTs is provided.

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Flexible ultra-short channel organic ferroelectric non-volatile memory transistors

Abstract: Ferroelectric non-volatile memory devices are the most promising type of memory for future use in commercial applications.

Cited by 54 publications

References 38 publications

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

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