Flexible ultraviolet–visible photodetector based on HfS 3 nanobelt film

Tao, Yong; Chen, Jin-Qiang; Wu, Jiajing; Wu, Yi; Wu, Xingxin

doi:10.1016/j.jallcom.2015.10.184

Cited by 32 publications

(22 citation statements)

References 39 publications

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“…Up to now, 1D inorganic semiconducting nanostructures that have been successfully exploited in realm of flexible photodetection include Si NWs, Ge NWs, carbon NTs (CNTs), Se NBs, ZnO NWs (or NRs), GaN NWs, SnO NWs, CuO NWs, TiO 2 NRs, SnO 2 NWs (or NRs, NTs), MoO 3 nanosheets (NSs), CdS NWs, SnS NRs (or nanoflakes), CdSe NBs, ZnSe NBs, ZnTe NWs, GaTe NWs, InP NWs, GaP NWs, GaSb NWs, SnS 2 NSs, HfS 2 NBs, PbI 2 NWs (or NPs), ZrS 3 NBs, In 2 S 3 NWs, Sb 2 S 3 nanoneedles or nanowalls, Sb 2 Se 3 NWs, Zn 3 P 2 NWs, Zn 3 As 2 NWs, ZnGa 2 O 4 NWs, Zn 2 GeO 4 NWs, In 2 Ge 2 O 7 NWs, and hybrid heterostructures based on these nanomaterials . The 1D inorganic nanostructures can be easily synthesized by vapor‐phase methods, such as chemical vapor deposition (CVD), physical vapor deposition (PVD) and metal‐organic chemical vapor deposition (MOCVD).…”

Section: D Inorganic Nanostructures‐based Flexible Photodetectorsmentioning

confidence: 99%

Flexible Photodetectors Based on Novel Functional Materials

Xie

Yan

2017

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Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

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Section: D Inorganic Nanostructures‐based Flexible Photodetectorsmentioning

confidence: 99%

Flexible Photodetectors Based on Novel Functional Materials

Xie

Yan

2017

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“…14 Zeng et al showed that growing strain in HfS 3 resulted in a switch from an indirect to a direct band gap of 2.2 eV, whereas Tao and his group calculated the indirect and direct optical energy gaps of HfS 3 nanobelts to be 1.73 and 2.19 eV, respectively. 31,32 As shown by photoluminescence (PL) studies, the nanobelts displayed strong emission at 483, 540, and 600 nm in response to excitation at 400 nm. 32 Likewise, Zhao et al calculated the band gaps for Zrs 3 , Zrse 3 , Hfs 3 , and Hfse 3 to be 1.13, 0.23, 1.08, and 0.05 eV, respectively.…”

Section: àmentioning

confidence: 99%

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

Patra

Rout

2020

RSC Adv.

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“…Apart from the TMDCs, the 2D chalcogenide crystals, such as III–VI InSe, [ 79 ] GaX (X = S, Se, or Te), [ 80 ] IV–VI SnS 2 , [ 81 ] and V–VI Bi 2 X 3 (X = S, Se, or Te), [ 82 ] HfS 3 , [ 83 ] Bi 2 O 2 Se [ 84 ] have also drawn intensive attention in flexible photodetection due to their appealing optoelectrical properties and mechanical flexibility. A broad spectral flexible photodetector based on InSe is fabricated by Chen's group.…”

Section: Strain‐engineered Photoresponse Performance Of 2d Materials‐mentioning

confidence: 99%

Strain Engineering in 2D Material‐Based Flexible Optoelectronics

Liu

et al. 2020

Small Methods

110

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Flexible optoelectronics, as promising components hold shape‐adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials‐based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials‐based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain‐engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials‐based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials‐based flexible optoelectronics are expounded.

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Flexible ultraviolet–visible photodetector based on HfS 3 nanobelt film

Cited by 32 publications

References 39 publications

Flexible Photodetectors Based on Novel Functional Materials

Flexible Photodetectors Based on Novel Functional Materials

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

Strain Engineering in 2D Material‐Based Flexible Optoelectronics

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