Flexible VO2/Mica thin films with excellent phase transition properties fabricated by RF magnetron sputtering

Ren, Weibiao; Huang, Wanxia; Zhu, Huabing; Wang, Daoyuan; Zhu, Li-Guo; Shi, Qiwu

doi:10.1016/j.vacuum.2021.110407

Cited by 15 publications

(5 citation statements)

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“…With all other parameters unchanged, the VO 2 film can be obtained after 40 min. Owing to the high vacuum and preheating, no other gas was thought to be present in the sputtering cavity …”

Section: Methodsmentioning

confidence: 99%

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VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

Wang,

Gao,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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VO 2 , which exhibits semiconductor−metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO 2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laserinduced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO 2 triggered by laser. This study offers a blueprint for designing VO 2 /MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.

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“…With all other parameters unchanged, the VO 2 film can be obtained after 40 min. Owing to the high vacuum and preheating, no other gas was thought to be present in the sputtering cavity …”

Section: Methodsmentioning

confidence: 99%

“…Owing to the high vacuum and preheating, no other gas was thought to be present in the sputtering cavity. 40 2.3. Characterization.…”

Section: Deposition Of Vomentioning

confidence: 99%

VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

Wang,

Gao,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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“…However, because of the low deposition temperature limited by the low thermal stability of polymer substrates, the grown films remain amorphous, with oxygen vacancies highly dependent on the oxygen flux during deposition, resulting in unpredictable photoelectrical performance. To realize the in situ growth of single-crystalline oxide thin films, high thermal stability up to the temperature range for the crystallization of oxide ceramic materials and ideal lattice match with the oxides are required [126][127][128][129][130].…”

Section: Epitaxial Films Grown In Situmentioning

confidence: 99%

Flexible gallium oxide electronics

Tang

2023

Semicond. Sci. Technol.

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Flexible Ga2O3 devices are becoming increasingly important in the world of electronic products due to their unique properties. As a semiconductor, Ga2O3 has a much higher bandgap, breakdown electric field, and dielectric constant than silicon, making it a great choice for next-generation semiconductor materials. In addition, Ga2O3 is a particularly robust material that can withstand a wide range of temperatures and pressure levels, thus is ideal for harsh environments such as space or extreme temperatures. Finally, its superior electron transport properties enable higher levels of electrical switching speed than traditional semiconducting materials. Endowing Ga2O3-based devices with good mechanical robustness and flexibility is crucial to make them suitable for use in applications such as wearable electronics, implantable electronics, and automotive electronicsHowever, as a typical ceramic material, Ga2O3 is intrinsically brittle and requires high temperatures for its crystallization. Therefore fabricating flexible Ga2O3 devices is not a straightforward task by directly utilizing the commonly used polymer substrates. In this context, in recent years people have developed several fabrication routes, which are the transfer route, in situ room-temperature amorphous route, and in situ high-temperature epitaxy route. In this review, we discuss the advantages and limitations of each technique and evaluate the opportunities for and challenges in realizing the applications of flexible Ga2O3 devices.

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“…Because generally VO 2 is grown on the substrate under high temperature, high pressure, and vacuum conditions such as general thermal evaporation, ion beam sputtering, pulsed laser deposition, and magnetron sputtering, it is limited in patterning for RF electronics such as fabrication area, design freedom, scalability, and cost. [45][46][47][48][49][50][51][52] To overcome this limitation, advanced fabrication method has been developed such as medium frequency reactive magnetron sputtering [53,54] and a combination of solution-based VO 2 and additive manufacturing. Meanwhile, solution-based synthesized VO 2 particles can achieve flexibility and scalability by utilizing additive manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Highly Scalable, Flexible, and Frequency Reconfigurable Millimeter‐Wave Absorber by Screen Printing VO₂ Switch Array onto Large Area Metasurfaces

Park

Jung

et al. 2023

Adv Materials Technologies

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Flexible VO2/Mica thin films with excellent phase transition properties fabricated by RF magnetron sputtering

Cited by 15 publications

References 50 publications

VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

Flexible gallium oxide electronics

Highly Scalable, Flexible, and Frequency Reconfigurable Millimeter‐Wave Absorber by Screen Printing VO₂ Switch Array onto Large Area Metasurfaces

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Flexible VO2/Mica thin films with excellent phase transition properties fabricated by RF magnetron sputtering

Cited by 15 publications

References 50 publications

VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

Flexible gallium oxide electronics

Highly Scalable, Flexible, and Frequency Reconfigurable Millimeter‐Wave Absorber by Screen Printing VO2 Switch Array onto Large Area Metasurfaces

Contact Info

Product

Resources

About

VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

VO₂ Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

Highly Scalable, Flexible, and Frequency Reconfigurable Millimeter‐Wave Absorber by Screen Printing VO₂ Switch Array onto Large Area Metasurfaces