Flip-chip package soft failure analysis and case studies using time domain reflectometry

Cao, Lihong; Tran, Loc V.; Prabhu, Amogh; Tay, M. Y.

doi:10.1109/ipfa.2010.5531978

Cited by 9 publications

(2 citation statements)

References 3 publications

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“…For instance, presence of a crack changes the amplitude of the reflected signal, and this amplitude change can be used as a signature for crack detection. TDR method can access to hard-to-access location, and the method has been used successfully to detect crack in flip chips [ 117 , 118 ]. In 3D packaging inspection, TDR can successfully detect defects in solder interconnects and open failures in general.…”

Section: Ndt Methods For Ic Packagingmentioning

confidence: 99%

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

Aryan

Sampath

Sohn

2018

Sensors

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The article provides a review of the state-of-art non-destructive testing (NDT) methods used for evaluation of integrated circuit (IC) packaging. The review identifies various types of the defects and the capabilities of most common NDT methods employed for defect detection. The main aim of this paper is to provide a detailed review on the common NDT methods for IC packaging addressing their principles of operation, advantages, limitations and suggestions for improvement. The current methods such as, X-ray, scanning acoustic microscopy (SAM), infrared thermography (IRT), magnetic current imaging (MCI) and surface acoustic waves (SAW) are explicitly reviewed. The uniqueness of the paper lies in comprehensive comparison of the current NDT methods, recommendations for the improvements, and introduction of new candidate NDT technologies, which can be adopted for IC packaging.

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Section: Ndt Methods For Ic Packagingmentioning

confidence: 99%

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

Aryan

Sampath

Sohn

2018

Sensors

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“…Those devices with open or short-contact failures including those failing electrical test are sorting out from the good devices at the final electrical testing of power semiconductor [13][14][15]. Time domain reflectometry (TDR) is widely used in the electronics industry such as to detect failure in semiconductor components [16][17][18][19], characterizing the circuit board [20], measuring the C-V characteristics of semiconductor chip [21] or even detecting fatigue in the solder joint [22,23]. TDR is superior as compared with other non-destructive techniques such as scanning acoustic microscopy (SAM) and X-ray inspection [16,17] because on top of TDR is a non-destructive test; it is also capable of pointing out the type of failure (short, open, capacitive or inductive characteristics) based on the impedance mismatched.…”

Section: Introductionmentioning

confidence: 99%

Comparison Study of Time Domain Reflectometry (TDR) Measurement Methods for Detecting Wire Interconnect Related Open-Contact and Short-Contact Failures in Power Semiconductor

Ng¹,

Soo

2022

Trends Sci

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Open-contact and short-contact are 2 common failures that causing power semiconductor to have electrical malfunctioned. One of the reasons of these failures relate to defective in the wire interconnect. Time domain reflectometry (TDR) is a common method widely used to detect failures in semiconductor devices. This study focused on comparing 3 different TDR measurement methods in detecting wire related open and short failure for power semiconductor, namely Single-Ended method, Single-Pin Grounded method and All-Pin Grounded method. A special custom-made jig is used during the measurements to ensure all the methods are measured under the same conditions. This study shows that all the 3 TDR measurement methods are able to detect wire related open and short failures in power semiconductor. The Single-Pin grounded method is the preferred method because it is easy in term of setup and having the good capability in detecting both open and short failures. Furthermore, the study also shows that the TDR is able to detect the location of open and short failures that is not able to achieve by using the conventional electrical testing method. HIGHLIGHTS Comparison study on Single-Ended, Single-Pin Grounded and All-Pin Grounded TDR measurement methods in detecting open-contact and short-contact failure in power semiconductor The study shows Single-Pin Grounded TDR measurement method is the preferred method since it is easy in term of setup and able to detect both the open-contact and short-contact failures TDR measurement method is also able to locate the location of open-contact and short-contact failures GRAPHICAL ABSTRACT

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A Hybrid Modelling Approach for Parameter Estimation of Analytical Reflection Models in the Failure Analysis Process of Semiconductors

Kamm

Sharma

Jazdi

et al. 2021

2021 IEEE 17th International Conference on Automation Science and Engineering (CASE)

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Flip-chip package soft failure analysis and case studies using time domain reflectometry

Cited by 9 publications

References 3 publications

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

Comparison Study of Time Domain Reflectometry (TDR) Measurement Methods for Detecting Wire Interconnect Related Open-Contact and Short-Contact Failures in Power Semiconductor

A Hybrid Modelling Approach for Parameter Estimation of Analytical Reflection Models in the Failure Analysis Process of Semiconductors

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