2015
DOI: 10.1039/c5ra20820c
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Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

Abstract: Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance -plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from p… Show more

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Cited by 23 publications
(25 citation statements)
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“…However, the plasma chemistry and chemical reactions with the substrate surface during growth are still a matter of study [ 9 , 27 50 ]. The role of gas composition, deposition time and nature of substrate on the growth of VGNs has been discussed [ 24 , 27 , 47 ]. The first two parameters underpin the two competing disorder-related mechanisms.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, the plasma chemistry and chemical reactions with the substrate surface during growth are still a matter of study [ 9 , 27 50 ]. The role of gas composition, deposition time and nature of substrate on the growth of VGNs has been discussed [ 24 , 27 , 47 ]. The first two parameters underpin the two competing disorder-related mechanisms.…”
Section: Introductionmentioning
confidence: 99%
“…The first two parameters underpin the two competing disorder-related mechanisms. These mechanisms contribute to the defect band intensity through graphite structure amorphization and growth orientation [ 27 , 47 ].…”
Section: Introductionmentioning
confidence: 99%
“…So, the I D /I G ratio could not be appropriated to show the impact of the reduction process. Instead, the full width at half maximum (FWHM) of the G band may be considered, as it does not vary significantly at the edges [ 45 , 46 ]. A continuous increase of the FWHM of the G band with the increase in CA amount was observed in the reduced samples, shown in Figure 5 c, from 49.3 cm −1 for GO:CA (1:0) sample to 62.0 cm −1 , 63.9 cm −1 and 66.8 cm −1 for GO:CA (1:0.1), GO:CA (1:0.5) and GO:CA (1:1) samples, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Further details are reported in ref. 46 and 47. The deposition targetsubstrates are placed between 10, 20, 30 and 40 cm below the plasma source, resulting in the samples named V 1 Graphene, V 2 -Graphene, V 3 Graphene and V 4 Graphene respectively; and consequently in VGs of different structures in terms of height and density/spacing.…”
Section: Methodsmentioning
confidence: 99%