Float-zone growth of silicon crystals using large-area seeding

Menzel, Robert; Rost, H.-J.; Kießling, Frank M.; Sylla, L.

doi:10.1016/j.jcrysgro.2019.02.061

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…There are dozens of sub-modules for users to choose from. In addition, users can also be connected to the software platform through electromagnetism, thermodynamics, and other fields of specialized physical interfaces [16], further expanding the platform's functionality. The advantages of COMSOL for FZ process simulation are the software's ability to perform multiphysics field coupling, its good suitability for this study, and the integration of modeling, computation, and post-processing for easy data handling.…”

Section: Numerical Model and Calculation Methodsmentioning

confidence: 99%

Simulation of the Inductor Structure to Improve FZ Thermal Fields

Ai,

Sun,

Zhang

et al. 2023

Coatings

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The floating zone (FZ) is one of the important methods for pulling silicon single crystals, but there are still problems of an unstable thermal field and crystallization difficulties. They will directly affect the growth of single crystals, resulting in defects and even fractures, seriously reducing production efficiency. Based on this, the effect of the modified inductor structure on the FZ thermal field is investigated in this paper. Using COMSOL 6.0 simulation software, 2D and 3D FZ models are established. The inductor steps under the 2D model and the inductor slits under the 3D model are compared to analyze the effects of steps and slits on the 8-inch FZ thermal field and melt flow. The distributions of temperature fields and melt flow in the melting zone under the action of the axial magnetic field are calculated by finite element analysis. The results show that the melt under the introduction of steps in the 2D model and the cross-slit structure in the 3D model is the most stable and favorable for crystal growth, which matches the actual production.

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Section: Numerical Model and Calculation Methodsmentioning

confidence: 99%

Simulation of the Inductor Structure to Improve FZ Thermal Fields

Ai,

Sun,

Zhang

et al. 2023

Coatings

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“…These are eliminated using the Dash technique-by growing a long, thin neck until dislocations terminate at the crystal surface by the climb mechanism [1]. Recent attempts to develop new techniques without the Dash neck, such as the modified FZ method, have shown that in cases using large-area seeds, the dislocations always occur at high temperatures above 1200 °C [2,3]. In this case, dislocation generation is believed to be caused primarily by high thermal stresses.…”

Section: Introductionmentioning

confidence: 99%

“…To better understand the origins of dislocation generation, an experiment by Rost et al [18] related to the modified FZ process [2,3] was carried out. An as-grown FZ Si single crystal was heated by a high-frequency (HF) coil in a controlled manner up to different temperatures, depending on the position.…”

Section: Introductionmentioning

confidence: 99%

Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

et al. 2022

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Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement with the experiment. To better explain the experimentally observed dislocation distribution, the Alexander–Haasen model was extended with a critical stress threshold below which no dislocation multiplication occurs. The results are compared with the experiment, and some remaining shortcomings in the model are discussed.

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A Numerical Study of Liquid Bridge Solidification

Vu,

Pham

2024

Lecture Notes in Mechanical Engineering

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Float-zone growth of silicon crystals using large-area seeding

Cited by 7 publications

References 14 publications

Simulation of the Inductor Structure to Improve FZ Thermal Fields

Simulation of the Inductor Structure to Improve FZ Thermal Fields

Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

A Numerical Study of Liquid Bridge Solidification

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