Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash

Park, Donghyuk; Lee, Jaejin

doi:10.1109/tmag.2010.2101054

Cited by 25 publications

(10 citation statements)

References 16 publications

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“…Recent studies have shown that the amount of CCI can be modeled as a linear combination of threshold voltage shifts at the neighboring cells [8,14]. Thus, simple signal processing based approaches that are similar to FIR filtering can resolve the CCI [2,14,15]. The cell-to-cell interference canceller (CCIC) utilizes the following equation to estimate the amount of CCI: In (1), ΔV [i] denotes the observed threshold voltage shift of the i-th neighbor cell.…”

Section: Cell-to-cell Interference Cancellation and Soft-information mentioning

confidence: 99%

“…The former utilizes the output signals of multi-level voltage sensing to eliminate the CCI when reading memory, while the latter modifies the target programming voltage of the ISPP (incremental step pulse programming) scheme to compensate the CCI when a writing page. Since the coupling coefficients have different values according to the locations of victim cells [17], an adaptive LMS (least mean square) filter based coupling canceller was proposed in [15]. This approach continuously updates the coefficients of the CCI canceller by using a single data sample at each iteration.…”

Section: Cell-to-cell Interference Cancellation and Soft-information mentioning

confidence: 99%

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Signal processing techniques for reliability improvement of sub-20NM NAND flash memory

Lee

Kim

Sung

2013

SiPS 2013 Proceedings

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The capacity of NAND flash memory has been continuously increased by adopting process technology scaling and multi-level cell (MLC) data coding. However, the reliability of stored data becomes a very important issue because the scaled feature size lowers the number of electrons at each floating-gate while increasing the cell-to-cell interference. In this paper, we review recent advances in signal processing techniques for reliability improvement of sub-20 nm NAND flash memory, which includes estimation of the threshold voltage distribution, cell-to-cell interference cancellation, and optimal multi-level memory sensing. We also present experimental results for the explained signal processing algorithms. Especially, we demonstrate the reliability improvement when combining all these techniques.

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Section: Cell-to-cell Interference Cancellation and Soft-information mentioning

confidence: 99%

Section: Cell-to-cell Interference Cancellation and Soft-information mentioning

confidence: 99%

Signal processing techniques for reliability improvement of sub-20NM NAND flash memory

Lee

Kim

Sung

2013

SiPS 2013 Proceedings

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“…이전에 제안되었던 커플링 제거기는 프로그램 순서의 가정에 의해 찾아낸 커플링 잡음이 없는 셀 데이터를 읽어, 그 데이터부터 커플링 잡음을 제거 하면서 최종 원하는 셀의 데이터를 읽게 된다. 하지 만 이런 방식은 최악의 경우 모든 블록 내의 셀 데 이터를 다 읽어야 했다 [7,8] . [9] .…”

Section: ⅰ 서 론unclassified

Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel

Park¹,

Lee²

2012

The Journal of Korea Information and Communications Society

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Multi-level cell NAND flash is a flash memory technology using mulitple levels per cell to allow more bits to be stored. Currently, most multi-level cell NAND stores 2 bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. The most error cause is coupling noise. Thus, in this paper, we studied coupling noise cancellation scheme for reduction memory on the 16-level cell NAND flash memory channel. Also, we compared the performance threshold detection and proposed scheme.

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“…Up to date, some hard detection strategies including the post-compensation method [1] and the coupling canceller method [2] were presented. In particular, the postcompensation detector [1] and the coupling canceller detector [2] subtract estimates of ICI from the noisy observations of the channel output (i.e., the sensed voltage of each cell).…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the postcompensation detector [1] and the coupling canceller detector [2] subtract estimates of ICI from the noisy observations of the channel output (i.e., the sensed voltage of each cell). Some "soft" detection strategies were also presented by using uniform and/or non-uniform channel output quantizations and then introducing the soft (decision) information in [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

All-bit-line MLC flash memories: Optimal detection strategies

Huang

Asadi

Kavcic

et al. 2014

2014 IEEE International Conference on Communications (ICC)

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We are concerned with the optimal detector design for the all-bit-line MLC flash memory. We provide a channel model of the MLC flash memory, where the channel parameters are mathematically tractable. Then we present an optimal maximum a-posteriori sequence detector. The optimal detector can be executed over a trellis whose branch metrics can be computed by using Fourier transforms of analytically computable characteristic functions (corresponding to likelihood functions). The softoutput detectors for both simple one-dimensional channel models and more realistic page-orientated two-dimensional channel models are derived. Simulation results show not only that the soft-output detector has the same hard-output bit-error-rate performance as some previously known detectors did, but that the soft-output detector outperforms previously known detectors by a gain of 0.23 dB.

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Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash

Cited by 25 publications

References 16 publications

Signal processing techniques for reliability improvement of sub-20NM NAND flash memory

Signal processing techniques for reliability improvement of sub-20NM NAND flash memory

Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel

All-bit-line MLC flash memories: Optimal detection strategies

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