Floating Zone Crystal Growth

Lüdge, Anke; Riemann, H.; Wünscher, Michael; Behr, G.; Löser, W.; Muižnieks, A.; Cröll, A.

doi:10.1002/9781444320237.ch4

Cited by 8 publications

(5 citation statements)

References 152 publications

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“…Postdeposition treatments can be applied to enhance crystallinity or introduce dopants, such as exposure to gas (e.g., sulfurization and selenization, common in chalcopyrite materials) and rapid thermal annealing, and films can be doped via ion implantation or diffusion. Synthesis methods for bulk semiconductors varies, spanning a wide range of material quality, including solid-state reactions, spark plasma sintering, floating zone synthesis, growth from melt techniques, for example, Czochralski and Bridgman growth, , etc. To achieve semiconducting materials in layer-controlled 2D forms, the two major directions are top-down methods, that is, exfoliating materials from their bulk counterparts and bottom-up methods, that is, direct synthesis of 2D materials from constituent elements or precursors (see section for examples) .…”

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

“…sulfurization and selenization, common in chalcopyrite materials) 72 and rapid thermal annealing, 73 and films can be doped via ion implantation or diffusion. Synthesis methods for bulk semiconductors varies, spanning a wide range of material quality, including solid state reaction, spark plasma sintering 11 , floating zone synthesis, 74 growth from melt techniques e.g. Czochralski and Bridgman growth, 75,76 etc.…”

Section: Experimental Synthesis and Phase Puritymentioning

confidence: 99%

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Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Section: Experimental Synthesis and Phase Puritymentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…[ 2 ] With great efforts been made during the past decades, [ 3 ] the FZ technique has become one of the most popular crystal growth methods for a wide range of materials, including metals, oxides, and semiconductors, as well as various nonconventional high‐temperature superconductors and new magnetic materials. [ 4 ] Different from other methods such as flux growth, top seeded solution growth, and the Czochralski method, crystals grown by FZ method must be characterized with particular care with respect to their actual crystallinity. In this regard, it is worth to cite one comment from Dabkowska.…”

Section: Introductionmentioning

confidence: 99%

A Model for Evaluating the Crystallinity Quality of Single Crystals Grown by the Floating Zone Technique

Wang

et al. 2022

Cryst. Res. Technol.

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The floating zone technique is a popular method for crystal growth of nonconventional superconductors and magnetic materials. However, the quality must be characterized with particular care with respect to their actual crystallinity since not everything grown by floating zone method is a single crystal. In this paper, the molten-zone sensitive material LiCoPO 4 has been grown by the floating zone method using Co(NO 3 ) 2 •6H 2 O and CoO precursors, respectively, abbreviated as LCP N and LCP O . The grown materials are characterized regarding their chemical composition, phase purity, crystal perfection, and orientation. In order to optimize crystal growth and quantitatively characterize its crystallinity quality, the development factor (V) has been proposed to determine the growth rate of the grains, while the orientation deviation factor (𝜹) for assessing the quality of the grown crystals. The development factors V for LCP N and LCP O are calculated to be 0.05 and 0.09, respectively, indicating that the grains of LCP O develop faster than those of LCP N . At the same time, the orientation deviation factor of LCP O exceeds that of LCP N (𝜹(LCP O ) = 2.00, 𝜹(LCP N ) = 0.77) suggesting a higher quality for the latter. This model provides significant guidance for the evaluation of other materials grown by the floating zone method.

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“…The floating zone (FZ) technique used to grow silicon single crystals of high purity is described in [1]. The choice of the working frequency for the inductively heated floating zone process is primarily bounded by two aspects.…”

Section: Introductionmentioning

confidence: 99%

Influence of reduced working frequencies on the floating‐zone growth of silicon single crystals

Menzel

Rost

Luedge

et al. 2011

Cryst. Res. Technol.

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Lowering the working frequency in the inductively heated floating zone growth of Si Single crystals will reduce the risk of arcing at the induction coil. This is of particular interest in the growth of large diameter crystals. In the current paper we present results from growth experiments at lower frequencies, 2 MHz and 1.7 MHz. It is found that the growth of dislocation-free crystals is possible at these frequencies and cause distinct changes in the interface deflection and radial resistivity profiles. Results from numerical simulation of the melt flow at different frequencies are presented.

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Floating Zone Crystal Growth

Cited by 8 publications

References 152 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

A Model for Evaluating the Crystallinity Quality of Single Crystals Grown by the Floating Zone Technique

Influence of reduced working frequencies on the floating‐zone growth of silicon single crystals

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