Floppy to rigid transition and chemical ordering in GeSb(As)Se glasses

Nanophase separation and effects on properties of Ge–As–Se chalcogenide glasses

“…While in the present work, T g varied abruptly when Z exceeded 2.64, indicating a new mechanism of connectivity transition. Similar results have been reported in As-Se and Ge-Sb-Se systems which were ascribed to glass structure transition from layered to three-dimensional linkage at this threshold value [26,27]. According to our excremental results, however, it is supposed that intensive nanophase separation might be another possible factor affecting T g due to competition of two different nanophases in a specific temperature range.…”

Effect of topological thresholds on thermal behaviour of germanium telluride glasses containing metallic additive

“…In many binary glassy systems such as Ge-Te [10], Si-Te [11], GeSe [12], Ge-S [10], Si-Se [10] and As-Te [13], the mechanical threshold is fond to occur at Z av = 2.4. Several ternary glassy systems like As-Se-Te [14] and Al-As-Te [15], GeSe-Te [16], Ge-As-Se [17,18], Ge-Sb-Se [19] and Ge-InSe [20], Ge-As-Te [21], etc., show rigidity transformation at Z av = 2.4. In all the above glassy systems, unusual variations in different properties have been found at the mechanical threshold composition.…”

“…Unlike in rigidity percolation threshold, the anomalies in the chemical threshold seem to be universal. For, example, a maximum in T g has been observed at the chemical threshold in a variety of glasses such as Ge-Se [12], Ge-Sb-Se [20], Ge-In-Se [24], etc., including the present Ag-Ge-Te glasses.…”

High field electrical switching behavior of Ge10Se90−xTlx glasses

“…In chalcogenide glasses, both T g [29,30] as well as V T [25,31] are known to increase with network connectivity and rigidity. Such an increase is normally seen in both glass transition temperatures and the switching voltages of many chalcogenide systems, with an addition of metal atoms which coordinate tetrahedrally [30,31].…”