2019
DOI: 10.3390/cryst9020072
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Flow Instabilities of Coupled Rotation and Thermal-Solutal Capillary Convection of Binary Mixture in Czochralski Configuration

Abstract: In order to understand the flow instabilities of coupled rotation and thermal-solutal capillary convection of binary mixture in a Czochralski configuration subjected to simultaneous radial thermal and solutal gradients, a series of three-dimensional direct numerical simulation have been conducted. The capillary ratio of the silicon-germanium mixture is −0.2. The rotation Reynolds numbers of crystal and crucible, Res and Rec range from 0 to 3506 and 0 to 1403, respectively. Results show that the basic flow is a… Show more

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Cited by 4 publications
(3 citation statements)
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“…Once the rotation is taken into account, the centrifugal force is introduced and interacted with the capillary forces. For the mixture with small capillary ratio of −0.2 [41], the thermocapillary effect is dominant, and it was proved that rotation has similar a influence as that in pure fluid. However, for the mixture with minus one capillary ratio, the thermal and solutocapillary forces are counterbalanced.…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…Once the rotation is taken into account, the centrifugal force is introduced and interacted with the capillary forces. For the mixture with small capillary ratio of −0.2 [41], the thermocapillary effect is dominant, and it was proved that rotation has similar a influence as that in pure fluid. However, for the mixture with minus one capillary ratio, the thermal and solutocapillary forces are counterbalanced.…”
Section: Introductionmentioning
confidence: 96%
“…These convections are coupled with a thermal effect, which directly leads to the sharp change of the crystal interface. After that, a series of experiments and simulations were conducted to qualify the coupling effect of the thermal and solutal-capillary effect in the silicon-germanium mixture [40,41]. Abbasoglu et al [42] pointed out that the concentration profiles is closely related with the temperature through the radial segregation.…”
Section: Introductionmentioning
confidence: 99%
“…The present work is beneficial for improving crystal qualities in Cz crystal growth. Figure 1 gives the physical model, which is a classical simplified model of the Cz growth system [31][32][33]. A disc with the radius of r s = 23 mm contacts the free surface of Ge 1-x Si x melt.…”
Section: Introductionmentioning
confidence: 99%