“…Forward simulation from a family of computational structural models has yielded clear trends in the variance as a function of the size and volume fraction of ordered regions (Bogle et al, 2007; Yi & Voyles, 2012). Based on these developments, the FEM technique has been used to identify differences in nanoscale order in thin films of a-Si (Gibson et al, 1998; Cheng et al, 2001; Voyles et al, 2001 a , 2001 b ; Nittala et al, 2005; Bogle et al, 2010), a-Ge (Gibson & Treacy, 1997; Voyles & Muller, 2002), phase change chalcogenide materials (Kwon et al, 2007; Lee et al, 2009; Darmawikarta et al, 2013), and various amorphous metals (Stratton et al, 2004; Stratton et al, 2005). In these experiments, qualitative differences in FEM variance were observed, and convincingly attributed to fundamental physical phenomena such as differences in film deposition condition (Voyles et al, 2001 a ), existence, and thermal ripening of subcritical nuclei that precede crystallization (Lee et al, 2009; Darmawikarta et al, 2013), and effect of alloying in crystallization kinetics (Darmawikarta et al, 2012).…”