Fluctuations of a charge on melted drops of silicon carbide during condensation

Structures of Self-Organization of Porosity in Solid

“…Both, condensation of silicon carbide vapor in the discharge plasma, and structure of gas pores in the crystal lattice of the surface irradiated by the inert gas ions are described by quasilinear stochastic Ito equations in the sense of Stratonovich. Distribution functions for the size pores are calculated similar to [6] for the melt droplets (nano powders). The porosity in thin films are calculated using 10 6 trajectories of random processes of the model.…”

“…Simulation of phase transition is considered in a numerical experiment based on the theory of stochastic dynamic variables [1]. Among the processes that modify the functional properties of the surfaces, an important role belongs to the phase transitions of the 1st kind [2] such as condensation of vapor in the volume of discharge plasma on the surface of the substrate [3], formation of defects consisting of vacancies and gas (vacancy gas) pores /VGD/ in the crystal lattice of the material [4,5], crystallization, melting, and many other phenomena of the interaction of the plasma with the surfaces [6], devices, installations, etc. At the initial stage of phase transitions with characteristic times of ~ 100 µsec, nuclei of a new phase have the form of melt droplets during vapor condensation or VGD pores when the gas implants in the crystal lattice.…”