Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications

Gul, Banat; Rehman, Aman‐ur

doi:10.1007/s11090-016-9726-1

Cited by 6 publications

(1 citation statement)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reactivity of bromine toward silicon is lower compared to fluorine and chlorine, which provides the higher selectivity, anisotropy, and control in silicon etching, , so the treatment of hydrogen bromide (HBr) plasma not only increases the patterned photoresist etch resistance but also significantly reduces the line edge roughness of 193 nm photoresist patterns . Therefore, HBr has attracted considerable attention in the semiconductor industry recently and has been widely employed in the plasma processing of integrated circuits for various applications .…”

Section: Introductionmentioning

confidence: 99%

Oscillator Strengths and Cross Sections of the Valence-Shell Excitations of HBr Studied by Fast Electron Impact

Zhu,

Wang,

Nie

et al. 2023

J. Phys. Chem. A

View full text Add to dashboard Cite

The oscillator strengths and cross sections of the valenceshell excitations of HBr were determined by fast electron scattering with an incident electron energy of 1500 eV and an energy resolution of 80 meV. The momentum transfer dependence behaviors of the generalized oscillator strengths have been used to elucidate the transition characteristics. The present results show that the strong spin−orbital interaction results in the observation of some triplet states in the (Λ, S) coupling and the constant generalized oscillator strength ratios for the pair states with the same electronic configuration and quantum number Ω, and the quantitative spin−orbit coupling coefficients of b 3 Π 1 (v = 0) and C 1 Π(v = 0) are determined. The optical oscillator strengths of the valence-shell excitations were obtained by extrapolating the generalized oscillator strengths to the limit of zero squared momentum transfer. The present optical oscillator strengths give an independent cross-check of the previous experimental and theoretical results, and the comparison shows that the line-saturation effect is more severe for the high Rydberg states with large intensities and narrow natural widths. The integral cross sections of the valence-shell excitations of HBr were obtained from the excitation threshold to 5000 eV by the BEscaling method. The present oscillator strengths and cross sections supplement the fundamental molecular database of HBr and can be used for modeling in the semiconductor industry, astrophysics, and atmospheric chemistry.

show abstract

Section: Introductionmentioning

confidence: 99%

Oscillator Strengths and Cross Sections of the Valence-Shell Excitations of HBr Studied by Fast Electron Impact

Zhu,

Wang,

Nie

et al. 2023

J. Phys. Chem. A

View full text Add to dashboard Cite

show abstract

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma

Gul

Iqbal

Khan

et al. 2022

Contributions to Plasma Physics

Self Cite

View full text Add to dashboard Cite

A self‐consistent two‐dimensional fluid model was used to study HBr/Cl2/O2 plasma discharge. A comprehensive set of 150 reactions comprising different processes (i.e., dissociation, ionization, and excitation) in tandem with 32 plasma species were considered in the computational model. The results revealed that the plasma reactions were dominated by 11 species (i.e., Cl, Cl+, Cl2+, H, H2, HCl, HCl+, Br, Br+, Br2, and HBr+), where the neutral species outnumbered the charged species. The density of charged species in the plasma reactor followed a bell shaped while the neutral species followed a double humped shaped distribution. The increase in plasma O2 concentration resulted in an initial decrease, followed by a gradual increase in the generation of Cl, Br, H, Cl+, and Br+ in the plasma discharge. A lower/higher concentration of oxygen in the plasma stimulated the densities of neutral/charged species, which facilitated the chemical/physical etching pathway. These findings provide new insights into the type of etching species and their optimization in the HBr/Cl2/O2 plasma discharge, with potential applications in the semiconductor industry.

show abstract