Fluid simulation of inductively coupled Ar/O
                    <sub>2</sub>
                    plasmas: Comparisons with experiment

Wang, Yanhui; Liu, Wei; Zhang, Yuru; Wang, You‐Nian

doi:10.1088/1674-1056/24/9/095203

Cited by 13 publications

(13 citation statements)

References 27 publications

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“…At the positive source term and pure drift transport, the O − profile ought to be relatively smooth and condense profile (as predicted in Ref. [21]), not a sharp delta. From the analytic theory, a delta ambi-polar potential is never needed for plasma evolving to steady state.…”

Section: Linear Decomposition Of the Continuity Equation Of Negative ...mentioning

confidence: 55%

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Zhao

2021

Chinese Phys. B

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One of the novel phenomena of Ar/O2 inductively coupled plasma, the delta negative ions density profile is discovered by the fluid simulation at very low electronegativity. The anions delta is found to be formed by the collaboration of successive plasma transport phases. The plasma transport itself is affected by the delta, exhibiting many new phenomena. A new type of Helmholtz equation is devised to mathematically explain the delta forming mechanism. For revealing the physics behind, a revised spring oscillator dynamic equation has been constructed according to the Helmholtz equation, in a relevant paper [Zhao S X and Li J Z (2021) Chin. Phys. B 30 055202]. The investigation about the anions delta distribution is a nice prediction of new phenomenon in low temperature electronegative plasmas, waiting for the validation of related experiments.

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Section: Linear Decomposition Of the Continuity Equation Of Negative ...mentioning

confidence: 55%

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Zhao

2021

Chinese Phys. B

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“…Under 100 W, the oxygen dissociation rate coefficient is high due to high electron temperature. [ 17 ] This means the O* ratio in the plasma is high.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of High‐Crystallinity ZrO₂Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Song

Jung

Kim

et al. 2022

Physica Status Solidi (a)

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ZrO2 deposition using the plasma‐enhanced atomic layer deposition (PEALD) process with a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe2)3) precursor is investigated. The effect of deposition temperature and plasma power on ZrO2 thin films’ bonding and electrical properties is studied. CpZr(NMe2)3 is used for the deposition at 100 W and 200–400 °C and at 50–1000 W at 300 °C. When generating O2 plasma, Ar gas and O2 gas are used together to generate more radicals. It is found that CpZr(NMe2)3's PEALD process window is 200–300 °C and the film's crystallinity is strongly influenced by deposition temperature and plasma power. In both process conditions, only the tetragonal phase changes. As a result, the ZrO2 film deposited at 50 W and 300 °C has the highest dielectric constant. This is due to the higher O radical ratio that corresponds to lower plasma power. A high O radical ratio causes a chemical reaction rather than an ion bombardment.

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“…This modeling platform has been used to simulation the ICP and capacitive coupled plasma (CCP) discharges. [22][23][24][25][26][27][28] The fluid model of the MAPS-ICP employed in this work is similar to that described in Refs. [24]- [26].…”

Section: Description Of the Fluid Modelmentioning

confidence: 99%

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

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Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to −4000 V, due to the heating of the capacitive field caused by the bias power. The N + fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N + 2 fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

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Fluid simulation of inductively coupled Ar/O ₂ plasmas: Comparisons with experiment

Cited by 13 publications

References 27 publications

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Characteristics of High‐Crystallinity ZrO₂Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

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Fluid simulation of inductively coupled Ar/O 2 plasmas: Comparisons with experiment

Cited by 13 publications

References 27 publications

Quasi-delta negative ions density of Ar/O2 inductively coupled plasma at very low electronegativity

Quasi-delta negative ions density of Ar/O2 inductively coupled plasma at very low electronegativity

Characteristics of High‐Crystallinity ZrO2Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

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Fluid simulation of inductively coupled Ar/O ₂ plasmas: Comparisons with experiment

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Quasi-delta negative ions density of Ar/O₂ inductively coupled plasma at very low electronegativity

Characteristics of High‐Crystallinity ZrO₂Thin Films Deposited Using Remote Plasma Atomic Layer Deposition